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Ultrafast Phase Transition and Critical Issues in Structure-property Correlations of Vanadium Dioxide Thin Films Jagdish Narayan, North Carolina State University, DMR 0803663.
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Ultrafast Phase Transition and Critical Issues in Structure-property Correlations of Vanadium Dioxide Thin Films Jagdish Narayan, North Carolina State University, DMR 0803663 • We have discovered room temperature ferromagnetism (RTFM) in undoped vanadium oxide (VO2), which exhibts a sharp optical and electrical transition at 341 K. • By combining RTFM in VO2 with optical and electrical transition, we envisage to cretae novel multifunction solid-state devices. • The VO2 epitaxial thin films were grown on c-sapphire via paradigm of domain matching epitaxy. • The observed RTFM has it origin in valence charge defect with unpaired electrons in V+3 in VO2 thins films, where concentration of the defects could be varied with oxygen partial pressure. • The VO2 RTFM having a Curie temperature above 500 K, saturated magnetization above 18 emu/cm3, and coercivity above 40 Oe at RT, can be useful for integrated smart sensors operating at RT. • Specific defects for a sample processed at 10-2 torr are given below. 1 *T. Yang, N. Sudhakar, H. Zhou, and J. Narayan, APL, 95, 102506 (2009) *T. Yang, C. Jin, R. Aggarwal and J. Narayan, J. Mater, Res. In press (2009) Fig. 2 The Resistivity with the increase temperature for the VO2 film under oxygen pressure of 10-2 torr.
Broader Impact-Applications of VO2Jagdish Narayan, North Carolina State University, DMR 0803663 • Optical Switching IR laser • These results suggest that VO2 has tremendous potential in multifunctional device applications related to spintronics, switching, and magnetic recording. • We are working with Kopin Corporation to transfer this technology for the development of smart sensors. • We working with NC A&T State University (minority institution) to enhance research collaboration and increase minority participation. The research results have been presented at the 2009 MRS Spring and will be presented at the 2009 MRS Fall Meeting in Boston. The research has been published published in the Applied Physics Letters (Volume 95, 102 506 (2009)) and is accepted for publication in the Journal of Materials Research (2009). • Smart window • Memory device