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Pixel Sensors for the CMS Experiment. Purdue University. Amitava Roy Carsten Rott Daniela Bortoletto Gino Bolla. Wafers. 3 non-oxygenated wafers from CSEM 2 non-oxygenated and 1 oxygenated wafer from Sintef. Breakdown Voltage. CSEM. Design Optimization.
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Pixel Sensors for the CMS Experiment Purdue University Amitava Roy Carsten Rott Daniela Bortoletto Gino Bolla
Wafers • 3 non-oxygenated wafers from CSEM • 2 non-oxygenated and 1 oxygenated wafer from Sintef
Breakdown Voltage CSEM
Design Optimization • Pixels with metal on top have higher breakdown voltage. • 3 best designs - design A, F & G G A F
Leakage Current • CSEM - 50-100 nA/cm2 • SINTEF - 5-25 nA/cm2
Oxygenated Wafer • Too sensitive to Humidity!
Inter-pixel Resistance • Around 100 KOhm before depletion! • Around 1 TOhm after depletion ! N+ P+ V A A R=V/I Variable V Constant V
Inter-Pixel Resistance Open Double Ring
Inter-Pixel Resistance Single Ring has lower resistance as expected Open Single Ring Open Double Ring
Inter-pixel Capacitance N+ P+ C Inter-pixel Capacitance 100fF
Conclusion • Leakage Current 100nA/cm2 • Best Designs - Design A, F & G with metal on top. • Need more wafers to get statistics about Oxygenated wafer. • Inter-pixel resistance - 100 KOhm before depletion, 0.1-1 Tohm after depletion. • Inter-pixel Capacitance - 100fF