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Improving the Stability of Hydrogenated Amorphous Silicon Solar Cells

Improving the Stability of Hydrogenated Amorphous Silicon Solar Cells. Team: Anthony Arrett , Wei Chen, William Elliott, Brian Modtland , and David Rincon Advisor/Client: Dr. Vikram Dalal. Overview.

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Improving the Stability of Hydrogenated Amorphous Silicon Solar Cells

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  1. Improving the Stability of Hydrogenated Amorphous Silicon Solar Cells Team: Anthony Arrett, Wei Chen, William Elliott, Brian Modtland, and David Rincon Advisor/Client: Dr. VikramDalal

  2. Overview • Goal: to improve the stability and efficiency of a-Si:H solar cells through annealing and graded Boron doping • Concept: PIN Solar cell deivce topology. Decrease defects (clusters) through high annealing temps. High clusters = poor efficiency and stability • Functional Specs: • Photoconductivity > 1*10-5Ω-1cm-1 • Dark Conductivity < 1*10-10Ω-1cm-1 • Tauc Band Gap < 1.8eV • Defect density after light soaking < 1*1016 cm-3 • Fill Factor > 60% • Efficiency > 5% • Drop in Efficiency after light soaking of no more than 10%

  3. Background of a-Si:H • What is a-Si:H (hydrogenated amorphous silicon)? • Advantages of a-Si:H • Cheaper, Easy to Make • Large Area Cells • Causes of instability in a-Si:H • Dangling Bonds created by Incident Light • Stradins breakthrough • Less Stability over Time with High –Temp Anneal

  4. Staebler-Wronski Effect

  5. Our approach • Annealing at high temperatures • Decrease dangling bond clusters • Boron graded doping • Improve built-in field for carrier collection • Trial and error using several different “recipes” for the production of a more stable a-Si:H device

  6. Questions

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