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Study of low temperature poly silicon for solar cells

2. Outline. IntroductionExperimentalResults and discussion ConclusionsReferences. 3. Introduction. ????????????????????????,???????????????,????????????????????????????????????????????????500?C ??1 ??,??????????????????????????????????????,??????X ??????(XRD)???????,??Si ????????,?????????

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Study of low temperature poly silicon for solar cells

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    1. 1 Study of low temperature poly silicon for solar cells Advisor: Dr.Hon Kuan Student: Tsung-Yu Li Date:98/04/22

    2. 2 Outline Introduction Experimental Results and discussion Conclusions References

    3. 3 Introduction ????????????????????????,???????????????,????????????? ???????????????????????????????????500°C ??1 ??,??????????? ???????????????????????????,??????X ??????(XRD)???????,??Si ????????,????????????,??????????(FE-SEM)????????????? ????????????,????,???????????-??????????????????????,??????????????????????????????????????

    4. 4 Experimental ???? PART I ???Al PART II ?????????Al

    5. 5 Results and discussion (a) SiO2 film (200nm) (b) Al film(250nm) (c) a-Si film(250nm) ??????SEM?

    6. 6 Results and discussion ?????SEM??

    7. 7 Results and discussion ???XRD???

    8. 8 Results and discussion first step annealing process at 500°C for 1 hour,without Al etching off

    9. 9 Results and discussion first step annealing process at 500°C for 1 hour ,and Al etching off

    10. 10 Results and discussion XRD spectra of poly-Si thin film annealed at 500°C for 1 hour and Al etched off

    11. 11 Results and discussion XRD spectra of Part I specimens annealed at (a) 450 °C, and (b)500 °C and 5 different durations and Al etched off

    12. 12 Results and discussion XRD peak intensity plot versus different annealing duration of Part I specimens annealed at 450 °C, and 500 °C

    13. 13 Results and discussion XRD FWHM plot versus different annealing duration of Part I specimens annealed at 450 °C, and 500 °C

    14. 14 Results and discussion Crystal size of polycrystalline silicon thin film versus different annealing duration of Part I specimens annealed at 450 °C, and 500 °C

    15. 15 Results and discussion XRD spectra of Part II specimens annealed at (a) 450 °C, and (b)500 °C and 5 different durations and Al etched off

    16. 16 Results and discussion XRD peak intensity plot versus different annealing duration of Part II specimens annealed at 450 °C, and 500 °C

    17. 17 Results and discussion XRD FWHM plot versus different annealing duration of Part II specimens annealed at 450 °C, and 500 °C

    18. 18 Results and discussion Crystal size of polycrystalline silicon thin film versus different annealing duration of Part II specimens annealed at 450 °C, and 500 °C

    19. 19 Results and discussion Raman spectra of single crystalline silicon

    20. 20 Results and discussion

    21. 21 Results and discussion

    22. 22 Results and discussion

    23. 23 Results and discussion

    24. 24 Results and discussion

    25. 25 Results and discussion

    26. 26 Results and discussion

    27. 27 Results and discussion

    28. 28 Results and discussion

    29. 29 Results and discussion

    30. 30 Results and discussion

    31. 31 Results and discussion

    32. 32 Results and discussion

    33. 33 Results and discussion

    34. 34 Results and discussion

    35. 35 Conclusions ?????450 °C ??15 ??????????,??????1µm ???????????????3~5 µm? ?????????15 ?????,??????????,?????60??????????,?????????? ?????????????????a-Si(1µm)???????????,????????????????? ????????????????????????10-7 A/cm2?,?????103~106 O-cm ??,??500 °C ??30 ????????????????,???23.4 cm2/V.s;??????????????????????????10-9 A/cm2 ?,?????108 O- cm ??? ??

    36. 36 References [1] A. Wohllebe, R. Carius, L. Houben, A. Klatt, P. Hapke, J. Klomfaß, H. Wagner, “Crystallization of amorphous Si films for thin film silicon solar cells”, Journal of Non-Crystalline Solids, 227-230, (1998), pp.925-929. [2] ???,?????-?????,????????,2005.9 ????? [3] http://www.e-tonsolar.com/edu.htm#1 [4] H. Kim, G. Lee, D. Kim, S. H. Lee, “A study of polycrystalline silicon thin films as a seed layer in liquid phase epitaxy using aluminum-induced crystallization”, Current Applied Physics 2 (2002) pp.129-133 [5] G. R. Hu, Y. S. Wu, C. W. Chao and H. C. Shih, “Growth Mechanism of Laser Annealing of Nickel-Induced Lateral Crystallized Silicon Films”, Jan. J. Appl. Phys., Vol. 45, No. 1A, 2006, pp.21-27 [6] O. Nast, S. Brehme, D. H. Neuhaus, and S. R. Wenham, Senior Member, “Polycrystalline Silicon Thin Films on Glass by Aluminum-Induced Crystallization”, IEEE transactions on electron devices, VOL. 46, NO. 10, 1999.10 [7] J.L. Hwang, F.Y. Yeh, Application and Lamination of Photovoltaic Module, ??????, 230?, 2006.2 [8] W. D. Callister, “Meterials Science and Engineering”, John Wiley & Sons, Inc., Second Edition [9] ?? ??,“????????????”,?????????,2002.9 ?? 103 [10] W. Shockley, “Electrons and Holes in semiconductors”, Litton Edacation Publishing Co., Inc., 1950. [11] I. W. Wu, T. Y. Huang, W. B. Jackson, A. G. Lewis, and A. Chiang, “Passivation Kinetics of Two Types of Defects in Polysilicon TFT by Plasma Hydrogenation“, IEEE Electron Devices Lett., Vol. 12,(1991), pp.181. [12] ???????,??????????????,??????,196?,2003.4? [13] T. Ohzone, M. Fukumoto, G. Fuse, A. Shinohara, S. Odanaka, and masaru sasago, “ion-implanted Thin Polycrystalline-Silicon High-Value Resistors for High-Density Poly-Load Static RAM Applications “, IEEE Trans. Electron Devices, Vol. 32, (1985), pp.1749. [14] D. B. Meakin, P. A. Coxon, P. Migliorato, J. Stoemenos, and N. A. Economou, “High-performance thin-film transistors from optimized polycrystalline silicon films“, Appl. Phys. Lett. Vol. 50, (1987), pp.1894. [15] K. Goshima, H. Toyoda, T. Kojima, M. Nishitani, M. Kitagawa, H. Yamazoe and H. Sugai, “Lower Temperature Deposition of Polycrystalline Silicon Films from a Modified Inductively Coupled Silane Plasma “Jan. J. Appl. Phys. Vol. 38, NO. 6A, (1999), pp.3655.

    37. 37 References [16] O. Ebil, R. Aparicio, S. Hazra, R. W. Birkmir, E. Sutterb, “Deposition and structural characterization of poly-Si thin films on Al coated glass substrates using hot-wire chemical vapor deposition”, Thin Solid Films 430(2003), pp.120-124. 104 [17] D. D. Sala, S. Loreti, L. Fornarini, I. Menicucci, A. Santoni, P. D. Veneri, C. Privatoc, J. Lancockd, “Laser-assisted chemical vapor deposition of thick poly-Si layers for solar cells”, Thin Solid Films 403-404(2002), pp.302-306. [18] ???,LTPS ??????????,????????,2004.9 ????? [19] M. S. Haque, H. A. Naseem, and W. D. Brown, “Interaction of aluminum with hydrogenated amorphous silicon at low temperatures”, J. Appl. Phys., Vol. 75, No. 8, 15 April 1994. [20] ???,VLSI ????,????????,2003.7.20 ????? [21] O. Nast, “Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon”, J. Appl. Phys. Vol. 88, No. 2, 15 July 2000. [22] K. M. Lim, M. Y. Sung, “Low noise digital data driver circuit integrated poly-Si TFT-LCD”, Microelectronics Journal 30 (1999), pp.905-910. [23] E. V. JelenkovicÂ, K. Y. Tonga, W. Y. Cheungb, I. H. Wilsonb, S. P. Wongb, M. C. Poon, “Low temperature doping of poly-SiGe films with boron by co-sputtering”, Thin Solid Films 368 (2000) 55-60. [24] K. Naeli, Mat. Res. Soc. Symp. Proc. Vol. 664, (2001), A6. [25] S. Nakahara, “Recent development in a TEM specimen preparation technique using FIB for semiconductor devices”, Surface and Coatings Technology 169-170 (2003), pp.721-727. [26] J. K. Rath, “Low temperature polycrystalline silicon:a review on deposition, physical properties and solar cell applications”, Solar Energy Materials & Solar Cells (2003), pp.431-487. 105 [27] ???,????????????????????,?????????????,2005.7 [28] ???,???,???,???,???,??????,????????,2000.12 ????? [29] K. Nakamura, M. A. Nicolet, and J. W. Mayer, ”Interaction of Al layers with polycrystalline Si”, Journal of Applied Physics, Vol. 46, No. 11, Noverber 1975.

    38. 38 References [30] O. Nast, “Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon”, J. Appl. Phys. Vol. 88, No. 2, 15 July 2000. [31] O. Nast, T. Puzzer, L. M. Koschier, A. B. Sproul, and Stuart R. Wenham, ”Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature”, Appl. Phys. Lett. 73, No. 22, 30 November 1998. [32] M. S. Haque, H. A. Naseem, and W. D. Brown, “Aluminum-induced crystallization and counter-doping of phosphorousdoped hydrogenated amorphous silicon at low temperatures”, J. Appl. Phys. 79 (10), 15 May 1996 [33] O. Prache, “Active matrix molecular OLED microdisplays”, Displays 22 (2001), pp.49-56. [34] W. S. Liao and S. C. Lee, “Interfacial interaction between Al-1%Si and phosphorus-doped hydrogenated amorphous Si alloy at low temperature”, J. Appl. Phys. 81 (12), 15 June 1997 [35] E. Pihana, A. Slaouia, P. R. Cabarrocasb, A. Focsaa, “Polycrystalline silicon films by aluminium-induced crystallisation: growth process vs. silicon deposition method”, E. Pihan et al. / Thin Solid Films 451 – 452 (2004), pp.328-333 106 [36] E. Pihan, A. Slaoui, A. Focsa, P. R. Cabarrocas, “Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process”, 3rd World Conference on Photovoltaic Energy Conversion, May 11-18, 2003 Osaka, Japan [37] P. I. Widenborg, A. G. Aberle, “Surface morphology of poly-Si films made by aluminium-induced crystallisation on glass substrates”, Journal of Crystal Growth 242 (2002), pp.270-282. [38] Z. JIN, G. A. Bhat, M. Yeungh, H. S. Kwok and M. Wong, “Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on SiO2”, Jpn. J. Appl. Phys., Vol. 36 (1997), pp. L 1637-L 1640.

    39. 39 THANKS FOR YOUR ATTENTION

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