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Power Converter Systems Graduate Course EE8407

Power Converter Systems Graduate Course EE8407. Bin Wu PhD, PEng Professor ELCE Department Ryerson University Contact Info Office: ENG328 Tel: (416) 979-5000 ext: 6484 Email: bwu@ee.ryerson.ca http://www.ee.ryerson.ca/~bwu/. Ryerson Campus. Topic 2

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Power Converter Systems Graduate Course EE8407

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  1. Power Converter Systems Graduate Course EE8407 Bin Wu PhD, PEng Professor ELCE Department Ryerson University Contact Info Office: ENG328 Tel: (416) 979-5000 ext: 6484 Email: bwu@ee.ryerson.ca http://www.ee.ryerson.ca/~bwu/ Ryerson Campus

  2. Topic 2 High-Power Semiconductor Devices

  3. High-Power Semiconductor Devices Lecture Topics • Power Diode • SCR Thyristor • Gate Turn-Off Thyristor (GTO) • Integrated Gate Commutated Thyristor (GCT) • Insulated Gate Bipolar Transistor (IGBT) • Switch Series Operation

  4. High-Power Semiconductor Devices • Device Rating

  5. Power Diode 4500V/800A press pack and 1700V/1200A module diodes

  6. Power Diode • Heatsink Assembly • Press pack device: • Double sided cooling • Low assembly cost and high power density • Preferred choice for high voltage high power applications

  7. SCR Thyristor 4500V/800A and 4500V/1500A SCRs

  8. SCR Thyristor • Switching Characteristics

  9. SCR Thyristor • Main Specifications 12000V/1500A SCR Thyristor

  10. Gate Turn-Off (GTO) Thyristor 4500V/800A and 4500V/1500A GTOs

  11. Gate Turn-Off (GTO) Thyristor • Symmetrical versus Asymmetrical GTOs

  12. Gate Turn-Off (GTO) Thyristor • Switching Characteristics

  13. Gate Turn-Off (GTO) Thyristor • Main Specifications 4500V/4000A Asymmetrical GTO Thyristor

  14. Integrated Gate Commutated Thyristor (GCT) 6500V/1500A Symmetrical GCT GCT = Improved GTO + Integrated Gate + Anti-parallel Diode (optional)

  15. Integrated Gate Commutated Thyristor • GCT Classifications

  16. Integrated Gate Commutated Thyristor • Switching Characteristics

  17. Integrated Gate Commutated Thyristor • Main Specifications 6000V/6000A Asymmetrical GCT

  18. Insulated Gate Bipolar Transistor (IGBT) 1700V/1200A and 3300V/1200A IGBT modules

  19. Insulated Gate Bipolar Transistor (IGBT) • IGBT Characteristics Static V-I Characteristics Switching characteristics

  20. Insulated Gate Bipolar Transistor (IGBT) • Main Specifications 3300V/1200A IGBT

  21. Device Series Operation • Cause of Voltage Imbalance

  22. Device Series Operation • Equal Voltage Sharing • S1, S2, S3: • GTO, GCT or IGBT • Voltage Sharing: • v1 = v2 = v3in steady state • and transients • Static Voltage Sharing: • Rv • Dynamic Voltage Sharing: • RsandCs

  23. Device Series Operation • Active Overvoltage Clamping (AOC) • Suitable for series IGBTs • Not applicable to GCTs • Assumption: • S1 is turned off earlier than S2 • VCE1 is clamed to Vm due to • active clamping.

  24. Summary

  25. Thanks

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