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SiPM Interconnections to 3D electronics

SiPM Interconnections to 3D electronics. SiMPs basics Why do we need 3D interconnections Concept of SiPMs with Bulk Integrated Quench Resistors – SiPMl concept What we want to do . Jelena Ninkovic Max-Planck-Institute for Physics, Munich, Germany.

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SiPM Interconnections to 3D electronics

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  1. SiPM Interconnections to 3D electronics • SiMPs basics • Why do we need 3D interconnections • Concept of SiPMs with Bulk Integrated Quench Resistors – SiPMlconcept • What we want to do Jelena Ninkovic Max-Planck-Institute for Physics, Munich, Germany

  2. What is a Silicon Photomultiplier - SiPM • An array of avalanche photodiodes • operated in Geiger mode  binary device • passive quenching by integrated resistor • read out in parallel  signal is sum of all fired cells AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  3. What is available? MEPhI/Pulsar (Moscow) - Dolgoshein CPTA (Moscow) - Golovin Zecotek(Singapore) - Sadygov Amplification Technologies (Orlando, USA) Hamamatsu Photonics (Hamamatsu, Japan) SensL(Cork, Ireland) AdvanSiD (former FBK-irst Trento, Italy) STMicroelectronics (Italy) KETEK (Munich) RMD (Boston, USA) ExcelitasTechnologies (former PerkinElmer) MPI Semiconductor Laboratory (Munich) Novel Device Laboratory (Beijing, China) Philips (Netherlands) Every producer uses its own name for this type of device: MRS APD, MAPD, SiPM, SSPM, MPPC, SPM, DAPD, PPD, SiMPl , dSiPM ……… AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  4. Why do we need 3D integration? AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  5. Components of a SiPMcell AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  6. SiPM cell components SiMPl approach p+ AD CD RQ CC n+ Vbias Concept developed at Max-Planck-Society Semiconductor Laboratory AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  7. SiPM cell components SiMPl approach high field n p+ AD CD RQ CC n+ Vbias AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  8. SiPM cell components SiMPl approach high field n p+ n-depleted gapregion AD CD n-non-depletedregion n-non-depletedregion RQ CC n+ Vbias AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  9. SiPM cell components SiMPl approach high field n p+ n-depleted gapregion AD CD n-non-depletedregion n-non-depletedregion RQ CC n+ Vbias Sensor wafer SOI wafers Handle wafer AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  10. Advantages and Disadvantages Advantages: • no need of polysilicon • free entrance window for light, no metal necessary within the array • coarse lithographic level • simple technology • inherent diffusion barrier against minorities in the bulk -> less optical cross talk Drawbacks: • required depth for vertical resistors does not match wafer thickness • wafer bonding is necessary for big pixel sizes • significant changes of cell size requires change of the material • vertical ‘resistor‘ is a JFET -> parabolic IV -> longer recovery times AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  11. 6mm 6mm Prototype production High homogeneity over big distances! 6 100 cells arrays placed over6mm distance 30x30 arraysensitive area free High linearity! High homogeneity within the array! AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  12. Fill factor & Cross Talk & Photon Detection Efficiency Fill factor limited only by the cross talk suppression need! Hamamatsu MPPC SiMPL DV=2V DV=2V No special cross talk suppression technology applied just intrinsic property of SiMPl devices DV=1V DV=1V AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  13. Detection of particles Excellent time stamping due to the fast avalanche process (<1ns) MIP gives about 80pairs/mm  huge signal in SiPM allows operation at small DV @223K <10% GE still giveshigh MIP detectionefficiency Reduction of dark rate and cross talk by at least an order of magnitude AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  14. Next generation SiMPl devices n n-depleted gapregion n-non-depletedregion n-non-depletedregion n+ AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  15. Next generation SiMPl devices n n-depleted gapregion n-non-depletedregion n-non-depletedregion n+ AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  16. Next generation SiMPl devices n Logic, TDC, Photon counter n-depleted gapregion Topologically flat surface High fill factor Adjustable resistor valueLow RC -> very fast Active recharge Ability to turn off noisy pixels Pitch limited by the bump bonding Cell electronics Cellelectronics n-non-depletedregion n-non-depletedregion n+ Cell electronics: Active quenching, Bias control, Cell activity, Digital output AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  17. Next generation SiMPl devices n Topologically flat and free surface High fill factor Sensitive to light n-depleted gapregion n-non-depletedregion n-non-depletedregion n+ AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  18. Next generation SiMPl devices n Topologically flat and free surface High fill factor Sensitive to light n-depleted gapregion n-non-depletedregion n-non-depletedregion n+ AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  19. Next generation SiMPl devices n Topologically flat and free surface High fill factor Sensitive to light Logic, TDC, Photon counter Cell electronics Cell electronics n-depleted gapregion n-non-depletedregion n-non-depletedregion n+ AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  20. Next generation SiMPl devices n Topologically flat and free surface High fill factor Sensitive to light TDC, Photon counter, active recharge Cell electronics Cell electronics n-depleted gapregion n-non-depletedregion n-non-depletedregion n+ sensor sensor wafer wafer handle wafer handle wafer 5. Etching backside 1. Structured implant on backside 2. bond sensor wafer 3. thin sensor side 4. process SiMPl arrays & flip chipping on back side on sensor wafer to handle wafer to desired thickness on top side AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  21. Next generation SiMPl devices n Topologically flat and free surface High fill factor Sensitive to light TDC, Photon counter, active recharge Cell electronics Cell electronics n-depleted gapregion n-non-depletedregion n-non-depletedregion n+ sensor sensor wafer wafer handle wafer handle wafer 5. Etching backside 1. Structured implant on backside 2. bond sensor wafer 3. thin sensor side 4. process SiMPl arrays & flip chipping on back side on sensor wafer to handle wafer to desired thickness on top side AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  22. Next generation SiMPl devices n Topologically flat and free surface High fill factor Sensitive to light TDC, Photon counter, active recharge Cell electronics Cell electronics n-depleted gapregion n-non-depletedregion n-non-depletedregion n+ sensor sensor wafer wafer handle wafer handle wafer 5. Etching backside 1. Structured implant on backside 2. bond sensor wafer 3. thin sensor side 4. process SiMPl arrays & flip chipping on back side on sensor wafer to handle wafer to desired thickness on top side AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

  23. Thanks for the attention!! AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

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