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Modern Semiconductor Devices Fall 2013

Modern Semiconductor Devices Fall 2013. Course Outline. Textbook, Grading. Required textbook. Course Schedule 1. Course Schedule 2. Modern Semiconductor Devices Introduction.

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Modern Semiconductor Devices Fall 2013

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  1. Modern Semiconductor Devices Fall 2013

  2. Course Outline

  3. Textbook, Grading Required textbook

  4. Course Schedule 1

  5. Course Schedule 2

  6. Modern Semiconductor Devices Introduction

  7. In 1874, Ferdinand Braun, a German scientist, discovered that crystals could conduct current in one direction under certain conditions. This phenomenon is called rectification. In 1895, the Italian Guglielmo Marconi first showed a radio telegraphy technology. This was the beginning of wireless communication. Crystal detectors were used in radio receivers. It is able to separate the carrier wave from the part of the signal carrying the information. Early Discovery Source: http://www.lucent.com/minds/transistor/

  8. Fleming Valve: A Rectifying Vacuum Tube In 1904, John Ambrose Fleming, an English physicist, devised the first practical electron tube known as the "Fleming Valve”. In the early 1910s, heameliorated the reception of these signals by building up his research on the "Edison Effect" (dark particles smudge the inside of glass light bulbs as current flows through one direction), Fleming attached a light bulb outfitted with two electrodes to a receiving system. In it, electrons flew from the negatively charged cathode to the positively charged anode. As the current within the tube was moving from negative to positive, the weak incoming signal were rectified into detectable direct current. Source:http://www.lucent.com/minds/transistor/

  9. ENIAC: The First Computer The University of Pennsylvania's ENIAC computer, due to its incorporation of thousands of vacuum tubes (18,000 vacuum tubes), filled several large rooms and consumed enough power to light ten homes. The vacuum tube's cathode required a good amount of heat in order to boil out electrons and often burned out. Also, the actual glass tube was fragile and bulky.

  10. The First Solid-State Transistor 1st commercially successful TR Raytheon CK722, 1953 Ge-based pnp low power TR 1947 1st transistor AT&T Bell Lab Source:http://www.lucent.com/minds/transistor/ 1st Si transistor made by Gordon Teal at TI in 1954 3 inventors (John Bardeen, Walter Brattain, and William Shockley)share Nobel prize Sources:http://roiconnect.com/transistor.htm http://www.pbs.org/transistor/science/events/silicont1.html

  11. First Integrated Circuit 1958, Jack Kilby invented IC In 1962, Steven Hofstein and Fredric Heiman at the RCA research laboratory in Princeton, New Jersey, invented a new family of devices called metal-oxide semiconductor field-effect transistors (MOSFETs). Although these transistors were somewhat slower than bipolar transistors, they were cheaper, smaller and used less power. Also of interest was the fact that modified metal-oxide semiconductor structures could be made to act as capacitors or resistors.  Beginning of 2D IC Sources: http://www.ti.com/corp/docs/kilbyctr/jackbuilt.shtml http://www.maxmon.com/1926ad.htm

  12. Moore’s Law Gordon Moore: a co-founder of Intel “Component counts per unit area doubles every two years .” Source: Tata Motors Better for less tomorrow! Source: Lamborghini

  13. Moore’s Law: Decrease of Feature Size Thanks to simple MOSFET structure, making smaller in 2D makes better IC. 2012 minimum feature size : 22 nm Red blood cell: 7.5 mm How far can we go? Virus: 5 ~ 300 nm

  14. Moore’s Law: Increase of Complexity Number of TRs ↑ Putting more in the same 2D space tomorrow. Clock speed already flattened → → (One of the signs of the nearing end of Moore’s law)

  15. Moore’s Second Law Gordon Moore: a co-founder of Intel “Component counts per unit area doubles every two years .” It’s all about the cost! A new era of fabless/foundry semiconductor industry began.

  16. IC technology IC started with bipolar process in the 1960’s Market

  17. 2012 2013 2014 2015 2017 2020 2022 DRAM (half-pitch) 32 nm 28 nm 25 nm 23 nm 17.9 nm 12.6 nm 10 nm MPU (gate length) 22 nm 20 nm 18 nm 17 nm 14 nm 10.6 nm 8.9 nm DRAM 64 G 64 G 128 G 128 G 128 G 512 G 512 G Voltage (V) 0.87 0.85 0.82 0.80 0.75 0.68 0.64 ITRS (International Technology Roadmap for Semiconductors) Source: http://public.itrs.net/

  18. New Ideas for More Moore! • Keeping Moore’s law • Undesirable • Short channel • DIBL effect • How to keep Moore’s law? • 2D IC  3D IC • 3D gate technology (FINFETs, etc.) • Extend Moore’s law to 3 nm node (at least 20 more years to go…)

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