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High Performance E-Mode HEMT and the Application

High Performance E-Mode HEMT and the Application. 2004-21510 박 상 호. Contents. 1. InAlAs/InGaAs E-Mode HEMT 2. Advantages & Disadvantages of E-HEMT 3. Processes of E-HEMT 1) Pt-Buried Gate 2) Two-Step Recessed Gate 3) Selective Hydrogen Treatment 4. Applications - DCFL.

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High Performance E-Mode HEMT and the Application

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  1. High Performance E-Mode HEMT and the Application 2004-21510 박 상 호

  2. Contents 1. InAlAs/InGaAs E-Mode HEMT 2. Advantages & Disadvantages of E-HEMT 3. Processes of E-HEMT 1) Pt-Buried Gate 2) Two-Step Recessed Gate 3) Selective Hydrogen Treatment 4. Applications - DCFL

  3. InAlAs/InGaAs E-Mode HEMT • Threshold voltage is positive at Vgs=0 • Normally off state

  4. Advantages & Disadvantages of E-Mode HEMT • Advantages 1) 1개의 power supply만 요구 2) Large gm , ft, fmax • Disadvantages 1) large Rs 2) difficult process

  5. Pt-buried gate • Side etching effectdepleted gate peripheryhigh resistive • 대안 : Pt-based gate를 이용한 high schottky barrier height구현

  6. Cont. Pt Buried gate front after annealing Channel

  7. Cont. • DC Performance

  8. Cont. • RF Performance

  9. Two Step Recessed Gate

  10. Cont.

  11. Cont. • DC&RF Performance(0.1um gate length)

  12. Selective Hydrogen Treatment • Low etch selectivity & poor adhesiondifficult to fabricate E-HEMT • Without any recess etching and schottky metalSHT process

  13. Applications-DCFL • For high speed and low power dissipation used D,E-HEMT • Advantage : Power 소모 감소 single P.S사용small chip size • 문제점 : 하나의 chip에 E,D-HEMT를 동시에 구현 하는 것이 어렵다.(different gate recess depth) selective ion implantation 으로 해결 • Selective ion implantation ;wafer상에 E-HEMT fab. selective ion implantation D-HEMT구현

  14. DC & RF Performance

  15. Reference 1. Mahajan, “Enhancement mode High electron mobility transistor(E-HEMT’s)lattice-matched to InP” , IEEE Trans.E.D. , 1998 2. Suemitsu, “High-performance 0.1um gate enhancement mode InAlAs/InGaAs HEMT’s using two step recessed gate technology” , IEEE Trans.E.D. , 1999 3. Chen, “High performance InP-based enhancement –mode HEMT’s using non-alloyed ohmic contacs and Pt-based buried gate technology” , IEEE Trans.E.D. , 1996 4. I-H Kang, “Enhancement mode p-HEMT using selective hydrogen treatment”, Electronics lett. ,2003 5. Chan, “Enhancement and depletion mode AlGaAs/In0.15Ga0.85As HEMT’s fabricated by selective ion implantation”, Electronics lett. ,1993 6. Chen, “Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications”, Electronics lett. ,1995 7. Mahajan, “InP based HEMT for high speed, low power circuit applications” , Electronics lett. ,1998

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