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GND

The present circuit. +5V. R5 5.1 k. U2. +. U1. +. R2 10k. VR1* 100k. GND. TLV2374. GND. RF FET Gate. +. +. R4 10k. TLV2374. -. -. -. -. R6 10k. R3 10k. R 1 82k. -5V. GND. Proposed measures. +5V. C1 0.1uF. R5 5.1 k. U2. +. U1. +. R2 10k. VR1* 100k. GND.

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GND

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  1. The present circuit +5V R5 5.1k U2 + U1 + R2 10k VR1*100k GND TLV2374 GND RF FET Gate + + R4 10k TLV2374 - - - - R6 10k R3 10k R1 82k -5V GND

  2. Proposed measures +5V C1 0.1uF R5 5.1k U2 + U1 + R2 10k VR1*100k GND TLV2374 GND RF FET Gate + + R4 10k TLV2374 - - - - R6 10k R3 10k D1General Schottky Diode R1 82k -5V GND

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