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Parametric Instability of Mobile Elastic Gate in Tera- and Nano- High Electron Mobility Transistor. V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii. Outline. Introduction Modulated THz radiation detector
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Parametric Instability of Mobile Elastic Gate in Tera- and Nano- High Electron Mobility Transistor V.L. Semenenko, V.G. Leiman, A.V. Arsenin, A.D. Gladun and V.I Ryzhii
Outline • Introduction • Modulated THz radiation detector • Reduction the model to the capacitance transducer equations • Calculation for the threshold signal amplitude and power
Motivation Modulated THz radiation detectors are required Expected roadmap for some THz applications, 2007*) * Masayoshi Tonouchi, “Cutting-edge terahertz technology”, Nature Photonics 1, 97 - 105 (2007)
The first resonant gate transistor H. C. Nathanson, W. E. Newell, R. A. Wickstorm, and J. R. Davis, IEEE Trans. Electron Devices 14, 117, 1967.
Recent modulated THz detectors V. G. Leiman, et al., J. Appl. Phys. 104, 024514 (2008). V. Ryzhii, M. Ryzhii, Y. Hu, et al., Appl. Phys. Lett. 90, 203503 (2007).
Parametric instability in capacitance transducer Dimensionless equations
Device scheme & model Front view Top view Hydrodynamic model of electron transport in 2DEG Gate charge field component
Solution of the linearized equations Because of the linear equations Characteristic frequency & quality factor of the 2DEG oscillations
Equivalent system of ODEs … As it would be if the device was the following:
Results & conclusion According to our previous work**), in the case of plain metallic cantilever gate: can be 2-3 orders lower in the case of SWCNT gate * Huttel A.K. et al // Nano Lett., Vol. 9, No. 7, P. 2547, 2009. ** Arsenin A.V. et al // J. of Comm. Tech. and Electronics,Vol. 54, No. 11, P. 1319, 2009.
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