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An Introduction to SIMS and the MiniSIMS ToF. © Millbrook Instruments Limited Blackburn, UK www.millbrook-instruments.com www.minisims.com. Secondary Ion Mass Spectrometry (SIMS) & The Millbrook MiniSIMS. The SIMS Process. simulation courtesy of Dr Postawa Zbigniew
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An Introduction to SIMS andthe MiniSIMS ToF © Millbrook Instruments Limited Blackburn, UK www.millbrook-instruments.com www.minisims.com
Secondary Ion Mass Spectrometry (SIMS)&The Millbrook MiniSIMS
The SIMS Process simulation courtesy of Dr Postawa Zbigniew at the Jagiellonian University in Poland
Design Objectives • Increase routine use of Surface Analysis • more affordable • more accessible • Not a replacement for conventional SIMS • not state-of-the-art performance • restricted analysis conditions
Operational Strengths • Low Capital & Running Costs • Fast, On-Site Analysis • Compact Design, Single Electrical Supply • Full Automation & Control for Ease of Use • High Reliability • Rapid Sample Throughput • Simplified Data Interpretation • Remote Control via Internet
Surface Coatings Surface Treatments Electronic Components Semiconductors Electrodes & Sensors Catalysts Adhesives Lubricants Packaging Materials Corrosion Studies Typical Application Areas
Alternatives to a MiniSIMS ? • No Other Benchtop SIMS Instrument • Conventional SIMS Systems • much more complex and expensive • Contract Analysis Laboratories • not convenient, contamination during transport • Other Surface Analysis Techniques • generally less sensitive
Advantages of SEM / EDS • High magnification physical image • Quantitative elemental information
Advantages of SIMS • Surface specific analysis • Organic structure identification • Profiling for depth distribution • Light element detection
For many applications surface sensitivity is needed… EDX sampling depth is typically 1 micron 509 m Not 100 x Not 10 x But 1000 x – SIMS can offer true surface analysis
Conclusions • SIMS & EDS give complementary information • SIMS has advantages for • Organic surface contamination • 3 dimensional analysis of multi-layer structures • SEM / EDS has advantages for • High magnification physical imaging • Quantitative analysis
Typical Applications for the MiniSIMS ToF • Analysis of unknown samples (failure analysis) • Analysis of unique samples • Improved analysis of organic materials • Smaller area static SIMS analysis • Retrospective experiments
MiniSIMS ToF • Advantages over Quadrupole Instrument • Smaller area static SIMS analysis • Extended mass range • Higher mass resolution (organic v inorganic) • Retrospective experiments
MiniSIMS ToF • Use of Continuous Primary Beam • Fast analysis (= low cost per sample) • No loss of image resolution in pulsing • Simplified depth profiling (single beam) • Fast & simple static / imaging / dynamic SIMS in one instrument
Structurally significant peaks Characterisation of Layer
Structurally significant peaks Characterisation of Layer
Effect of Decreasing Area Mass Scale Analysis Area Dimension Quadrupole Data
Effect of Decreasing Area Mass Scale Analysis Area Dimension Time of Flight Data
Extended Mass Range K9I8
Extended Mass Range ToF –ve ion mode: Irganox molecular ion at m/z = 1175 Da
Sodium high at surface Conventional Profile
Sodium high at surface Sodium inclusion in layer Retrospective Cross-Section
Horizontal Image of inclusion Retrospective Analysis
MiniSIMS Summary • SIMS is a powerful technique for the 3-D analysis of the surfaces of materials and thin films • Information easily available by SIMS may be difficult or impossible by any other technique • SIMS is especially valuable for the detection of:- • organic species (e.g. silicones, fluorocarbons) • light elements (lithium, beryllium, boron …) • group IA & IIA metals, group VII halides
MiniSIMS Summary • SIMS is a fast analysis technique, especially for imaging applications • MiniSIMS ToF is most effective for a comparative analysis of samples • Desktop MiniSIMS means SIMS is now affordable and accessible to all
ToF MiniSIMS( v conventional ToFSIMS ) • Use of Continuous Primary Beam • Fast analysis (= low cost per sample) • No loss of image resolution in pulsing • Simplified depth profiling (single beam) • Fast & simple static / imaging / dynamic SIMS in one instrument • Upgrade path from Quadrupole to TOF
ToF MiniSIMS( v quadrupole MiniSIMS ) • Improved Static SIMS from smaller areas • Retrospective Experiment • 2D Imaging • 3D Imaging / Depth Profiling • Extended Mass Range • Higher Mass Resolution