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In situ TEM Study of Ni-InGaAs Solid-State Reactions

In situ TEM Study of Ni-InGaAs Solid-State Reactions. Renjie Chen. Introduction. As conventional Si CMOS scaling approaches the end of the roadmap, III-V based MOSFETs are seriously being considered as an alternative technology to continue Moore’s law . [1]

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In situ TEM Study of Ni-InGaAs Solid-State Reactions

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  1. In situ TEM Study of Ni-InGaAs Solid-StateReactions Renjie Chen

  2. Introduction • As conventional Si CMOS scaling approaches the end of the roadmap, III-V based MOSFETs are seriously being considered as an alternative technology to continue Moore’s law.[1] • To realized high-performance III-V MOSFETs, reliable contact metalsfor S/D with low contact resistance is essential,especiallyinhighlyscalesdevices. • An atomic level understanding of the metal-semiconductorsolid-statereactioncancan shed light on material-electronic property interactions at nano-scale,especiallywhentheintentionalorunintentionaldefectsarepresent. [1] Takagi, S.; Takenaka, M. In High mobility material channel CMOS technologies based on heterogeneous integration, Junction Technology (IWJT), 2011 11th International Workshop on, IEEE: 2011; pp 1-6

  3. Content • Introduction • Ni – III-V solid state reaction • In-situ TEM & Our group’s work • MyPreliminaryresults • ProcessdesigntofabricatechannelsonTEMmembrane • Recipemodification

  4. Ni-InGaAsSolid-StateReaction Self-aligned S/DContact Technology Ivana; Pan, J. etc. Applied Physics Letters 2011,99 (1), 012105-3 Kim, S. etc.Electron Devices Meeting (IEDM), pp26.6. 1-26.6. 4 Subramanian, S.; etc. Journal of The Electrochemical Society 2011,159 (1), H16-H21

  5. CrystallographicStudyofNi-GaAs GaAs Zinc Blende (a = 5.654 Å) Ni2GaAs hexagonal (a = 3.83 Å,c=5.04 Å) NiAshexagonal (a = 3.602 Å, c= 5.009 Å) β-NiGacesium chloride (a = 2.887 Å) Lahav, A.; Eizenberg, M.; Komem, Y., Interfacial reactions between Ni films and GaAs. Journal of Applied Physics 1986, 60 (3), 991-1001.

  6. Ni-InAsinNanoscaleChannels Diffusion Modal with Constant Source: Diffusion length: X = (Dt)1/2 Chueh, Y.-L., et al. (2008). "Formation and Characterization of NixInAs/InAs Nanowire Heterostructures by Solid Source Reaction." Nano Letters 8(12): 4528-4533

  7. In-situTEMTechnique Frances M Ross 2010 Rep. Prog. Phys. 73 114501 MRS BULLETIN • VOLUME 33 • FEBRUARY 2008 • www.mrs.org/bulletin

  8. PreviousWorkinOurGroup Heterogeneous Reactions in SiNanowires Tang, W.; Dayeh, S. A.; Picraux, S. T.; Huang, J. Y.; Tu, K.-N., Ultrashort Channel Silicon Nanowire Transistors with Nickel Silicide Source/Drain Contacts. Nano Letters 2012,12 (8), 3979-3985 Heterogeneous Reactions in Ge/Si Core/Shell Nanowires Dr.Minh’swork,submitted

  9. Heterogeneous Reactions withpresenceofTB: NucleationModeling: Heterogeneous Reactions withpresenceofTBandGB: Tang, W.; Picraux, S. T.; Huang, J. Y.; Gusak, A. M.; Tu, K.-N.; Dayeh, S. A., Nucleation and Atomic Layer Reaction in Nickel Silicide for Defect-Engineered Si Nanochannels. Nano Letters 2013,13 (6), 2748-2753

  10. Transfer InGaAs Membrane onto TEM Aperture TEM membrane TEM membrane InGaAs [100] Ni Ni InGaAs [110] Ni Ni Standard cubic stereographic projections for the [001] oriented crystal

  11. Approach 1: Ni-silicide Bonding Multiple Dielectric layers Deposition Bonding with Si TEM aperture Remove InP • HfO2 is used for HF resist layer (10 nm) • Al2O3 acts as block layer for F-etch (6 nm) • SiO2 prevents electronic leakage (200 nm) • Ni is used for Nickel Silicide bonding (Ti 25 nm, Ni 100 nm)

  12. Approach 2: Ni-InGaAs Bonding Bonding with Ni-InGaAs InP Removal • No need to remove SiNx layer • The broken window provides natural hollow square for Ni film evaporation • Ni for Ni-InGaAs bonding (Ti 5 nm, Ni 20 nm)

  13. Approach 1: Ni-silicide Bonding Approach 2: Ni-InGaAs Bonding Decrease Ni film thickness TEM aperture with 1 window (500um x 500um)

  14. TEMaperturewithmultiplewindowsincreases the chance for unbroken window: TEM aperture with 9 windows (100um x 100um)

  15. Fabricate InGaAs Diffusion Channels on Membrane Window • 1st EBL step: Write global/chip marks, followed by evaporation of Ni/Au/Ni • 2nd EBL step: Write Parallel lines on each window, evaporate Ni as both the reaction reservoir and the supporting lines • 2nd EBL step: Write Fin structure in between the Ni lines with different orientation

  16. MMA/PMMA double layers improve the lift-off process:

  17. Modified HSQ recipe for Fin writing: WithoutsurroundingNilines WithsurroundingNilines DenseNilines MF 319 Low T developing process 25% HDMS High T developing process

  18. Summary • In situ TEM observation is powerful to investigate the Ni-InGaAs solid state reaction . • Diffusion rate, alloy frontier interface, and crystallographic relationship can be studied during in situ TEM observation. • Currently, theInGaAsmembranewassuccessfullytransferredwithmodifiedbondingprocess,andseveralproblemsassociatedwithEBLwritinghasbeensolved. • FurtherexperimentsneedtobedoneinordertopreparethesamplereadyforTEMstudy.

  19. Thanks Q&A

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