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Stress Induced by Ni-InGaAs Formation. Renjie Chen Supervisor: Prof. Shadi A. Dayeh. Ni. Ni. Compressive Strain. Ni - InGaAs. Ni - InGaAs. InGaAs. Tensile Strain.
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Stress Induced by Ni-InGaAs Formation Renjie Chen Supervisor: Prof. Shadi A. Dayeh
Ni Ni Compressive Strain Ni-InGaAs Ni-InGaAs InGaAs Tensile Strain
Feste, S. F., et al. "Silicon nanowire FETs with uniaxial tensile strain." Solid-State Electronics 53.12 (2009): 1257-1262.
Ni4InGaAs2: a=0.396nm, c=0.516nm In0.53Ga0.47As: a=0.587nm Palmstrtfm, C., Lateral diffusion in Ni-GaAs couples investigated by transmission electron microscopy. J. Mater. Res 1988,3 (6).
Groenen, J.; Landa, G.; Carles, R.; Pizani, P. S.; Gendry, M.. Journal of Applied Physics 1997,82 (2), 803-809.