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Photoluminescence Spectroscopy and TEM Imaging of InGaAs Quantum Dot Chains

This presentation discusses the use of Photoluminescence spectroscopy and transmission electron microscopy imaging to study InGaAs quantum dot chains. Topics covered include the introduction of quantum dots, potential applications, and characterization techniques such as anneal photoluminescence spectroscopy and TEM. The presentation concludes with a discussion on plan view and cross-section cuts, photoluminescence lifetime measurements, and high-resolution photoluminescence analysis.

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Photoluminescence Spectroscopy and TEM Imaging of InGaAs Quantum Dot Chains

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  1. Photoluminescence spectroscopy and transmission electron microscopy imaging of InGaAs quantum dot chains Tyler Park Kenneth Clark David Meyer Andrew Perry Scott Thalman John Colton Haeyeon Yang APS 4CS Meeting 21-22 October 2011

  2. Introducing the Quantum Dot • Confine the electrons (carriers) in three dimensions by creating a potential barrier • Quantum Well constrained in 1 dimension • Quantum Wires constrained in 2 dimensions

  3. Quantum Dot Chains • Molecular Beam Epitaxy (MBE) • Modified Stranski-Krastanov(SK) method • Potential applications in quantum computing schemes • Applications for narrowband infrared lasers and detectors • Other applications similar to quantum dots Anneal

  4. Photoluminescence Spectroscopy Photon Electron

  5. Transmission Electron Microscopy • Do we have chains? • Size and spacing of quantum dots • Chemical composition

  6. TEM Images Quantum Dot? Platinum Carbon GaAs Capping Layer QD Layer 5 nm GaAs Substrate

  7. Conclusion • Plan view cuts and other cross-section cuts • Photoluminescence lifetime measurements • High resolution photoluminescence

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