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Broader Impacts of the NSF Project Serge Oktyabrsky, SUNY at Albany, DMR 1006253

III-Sb Interfaces with High-k Oxides: Science and Technology of Novel MOSFET Gate Stack Serge Oktyabrsky, SUNY at Albany, DMR 1006253. TEM micrograph and EDX profile of GaSb/InAs/Al 2 O 3 /Ni gate stack confirming the presence of InAs.

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Broader Impacts of the NSF Project Serge Oktyabrsky, SUNY at Albany, DMR 1006253

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  1. III-Sb Interfaces with High-k Oxides: Science and Technology of Novel MOSFET Gate StackSerge Oktyabrsky, SUNY at Albany, DMR 1006253 TEM micrograph and EDX profile of GaSb/InAs/Al2O3/Ni gate stack confirming the presence of InAs. • Interface engineering has resulted in significant improvement of the GaSb/Al2O3 interface for high-mobility MOSFET. An epitaxial thin 2nm InAs capping layer on (In)GaSb channel was demonstrated: • to improve channel mobility by about 20%, • to reduce interface trap density by a factor of 5, and • was demonstrated as an etch-stop layer for gate-last process flow with Chlorine-based plasma. (Top) C–V characteristics of n-GaSb MOS capacitor with 10 nm ALD Al2O3 and interface InAs layer in accumulation, (Bottom) Dit from High–Low frequency method: InAs interface layer results in a significant reduction in Dit. Room temperature hole mobilty in In0.36Ga0.64Sb QW channel as a function of top barrier thickness at hole density (1-2)×1012 cm-2 Greene, Madisetti, Nagaiah, Yakimov, Tokranov, Moore, Oktyabrsky, Solid State Electronics (2012) , Available online 6 July 2012: http://0-www.sciencedirect.com.precise.petronas.com.my/science/article/pii/S0038110112001864

  2. Broader Impacts of the NSF ProjectSerge Oktyabrsky, SUNY at Albany, DMR 1006253 • Three PhD students were directly involved in the project (one directly funded by NSF). • One of the students (P. Nagaiah) graduated with PhD in May 2011 and got a job at GlobalFoundries (Malta, NY) • In 2011/12 the results were presented within teleconferences, workshops and seminars to companies and organizations: Intel, Sematch, SRC, and conferences: 8th International Symposium on Advanced Gate Stack Technology (ISAGST) ,October 19, 2011, Bolton Landing, NY; International Semiconductor Device Research Symposium (ISDRS), December 8, 2011, College Park, MD; 39th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-29), January 22-26, 2012, Santa Fe, NM. • Community outreach activities were contributed by the students and staff supported by this project: 'NANOvember,' CNSE Community Days, ‘Nanocarrier days’. NANOvember 2011: CNSE students assist the attendees with hands-on activities and demonstra-tions at CNSE’s Albany NanoTech Complex CNSE provided more than 300 elementary, middle- and high-school students from upstate New York with an inside look at the exciting world of nanotechnology at NanoCareer Day at CNSE’s Albany NanoTech Complex on May 9, 2012

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