Week 8b

1. Week 8b OUTLINE Using pn-diodes to isolate transistors in an IC The metal-oxide-field-effect transistor (MOSFET) Structure of the MOSFET The MOSFET as a controlled resistance Pinch-off and current saturation in the MOSFET Channel-length modulation Velocity saturation in a short-channel MOSFET Reading Rabaey et al. Ch. 3.3.1-3.3.2 Hambley Ch. 12.1

2. Why are pn Junctions Important for ICs? • The basic building block in digital ICs is the MOS transistor, whose structure contains reverse-biased diodes. • pn junctions are important for electrical isolation of transistors located next to each other at the surface of a Si wafer. • The junction capacitance of these diodes can limit the performance (operating speed) of digital circuits

3. regions of n-type Si n n n n n p-type Si n-region n-region p-region Device Isolation using pn Junctions a b No current flows if voltages are applied between n-type regions, because two pn junctions are “back-to-back” a b => n-type regions isolated in p-type substrate and vice versa

4. Dynamic Random-Access Memory (DRAM) W o rd Line Row Address Decoder Bit Line Column Drivers and Sense Amplifiers Column Address Decoder/Selector Figure 0.1 Example of a densely populated integrated circuit – the DRAM

5. n n n n Transistor A Transistor B p-type Si We can build large circuits consisting of many transistors without worrying about current flow between devices. The p-n junctions isolate the transistors because there is always at least one reverse-biased p-n junction in every potential current path.

6. Modern Field Effect Transistor (FET) • An electric field is applied normal to the surface of the semiconductor (by applying a voltage to an overlying “gate” electrode), to modulate the conductance of the semiconductor • Modulate drift current flowing between 2 contacts (“source” and “drain”) by varying the voltage on the “gate” electrode Metal-oxide-semiconductor (MOS) FET:

7. L = channel length W • W = channel width n n L oxide insulator MOSFET • NMOS:N-channel Metal • Oxide Semiconductor GATE “Metal” (heavily doped poly-Si) DRAIN p-type silicon SOURCE • A GATE electrode is placed above (electrically insulated from) the silicon surface, and is used to control the resistance between the SOURCE and DRAIN regions

8. n n gate oxide insulator N-channel MOSFET Gate IG Drain Source IS ID p • Without a gate-to-source voltage applied, no current can flow between the source and drain regions. • Above a certain gate-to-source voltage (threshold voltageVT), a conducting layer of mobile electrons is formed at the Si surface beneath the oxide. These electrons can carry current between the source and drain.

9. n+ poly-Si p+ poly-Si p-type Si n-type Si N-channel vs. P-channel MOSFETs • For current to flow, VGS > VT • Enhancement mode: VT > 0 • Depletion mode: VT < 0 • Transistor is ON when VG=0V NMOS PMOS n+ n+ p+ p+ • For current to flow, VGS < VT • Enhancement mode: VT < 0 • Depletion mode: VT > 0 • Transistor is ON when VG=0V (“n+” denotes very heavily doped n-type material; “p+” denotes very heavily doped p-type material)

10. n+ poly-Si p+ poly-Si Body Body p-type Si n-type Si MOSFET Circuit Symbols G G NMOS n+ n+ S S G G PMOS p+ p+ S S

11. Water Model for P-channel MOSFET

12. MOSFET Terminals • The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals. • For an n-channel MOSFET, the SOURCE is biased at a lower potential (often 0 V) than the DRAIN (Electrons flow from SOURCE to DRAIN when VG > VT) • For a p-channel MOSFET, the SOURCE is biased at a higher potential (often the supply voltage VDD) than the DRAIN (Holes flow from SOURCE to DRAIN when VG < VT ) • The BODY terminal is usually connected to a fixed potential. • For an n-channel MOSFET, the BODY is connected to 0 V • For a p-channel MOSFET, the BODY is connected to VDD

13. + +   NMOSFET IGvs.VGS Characteristic Consider the current IG (flowing into G) versus VGS : IG G S D VDS oxide semiconductor VGS IG The gate is insulated from the semiconductor, so there is no significant steady gate current. always zero! VGS

14. The MOSFET as a Controlled Resistor • The MOSFET behaves as a resistor when VDS is low: • Drain current ID increases linearly with VDS • Resistance RDS between SOURCE & DRAIN depends on VGS • RDS is lowered as VGS increases above VT NMOSFET Example: oxide thickness tox ID VGS = 2 V VGS = 1 V > VT VDS Inversion charge density Qi(x) = -Cox[VGS-VT-V(x)] where Coxeox / tox IDS = 0 if VGS< VT

15. V I _ + W t homogeneously doped sample L Sheet Resistance Revisited Consider a sample of n-type semiconductor: where Qn is the charge per unit area

16. + +   VGS > VT zero if VGS< VT NMOSFET IDvs.VDS Characteristics Next consider ID (flowing into D) versus VDS, as VGS is varied: ID G S D VDS oxide semiconductor VGS ID Above threshold (VGS > VT): “inversion layer” of electrons appears, so conduction between S and D is possible VDS Below “threshold” (VGS < VT): no charge  no conduction

17. MOSFET as a Controlled Resistor (cont’d) We can make RDS low by • applying a large “gate drive” (VGS VT) • making W large and/or L small average value of V(x)

18. Charge in an N-Channel MOSFET VGS < VT: depletion region (no inversion layer at surface) VGS > VT : VDS  0 VDS > 0 (small) Average electron velocity v is proportional to lateral electric field E

19. What Happens at Larger VDS? VGS > VT : VDS = VGS–VT Inversion-layer is “pinched-off” at the drain end VDS > VGS–VT • As VDS increases above VGS–VT VDSAT, • the length of the “pinch-off” region DL increases: • “extra” voltage (VDS – VDsat) is dropped across the distance DL • the voltage dropped across the inversion-layer “resistor” remains VDsat • the drain current ID saturates Note: Electrons are swept into the drain by the E-field when they enter the pinch-off region.

20. Summary of IDvs.VDS • As VDS increases, the inversion-layer charge density at the drain end of the channel is reduced; therefore, ID does not increase linearly with VDS. • When VDS reaches VGS VT, the channel is “pinched off” at the drain end, and ID saturates (i.e. it does not increase with further increases in VDS). + – pinch-off region

21. IDvs.VDS Characteristics • The MOSFET ID-VDS curve consists of two regions: • 1) Resistive or “Triode” Region: 0 < VDS < VGS VT • 2) Saturation Region: • VDS > VGS VT process transconductance parameter “CUTOFF” region: VG < VT

22. Channel-Length Modulation • If L is small, the effect of DL to reduce the inversion-layer “resistor” length is significant • ID increases noticeably with DL (i.e. with VDS) ID ID= ID(1 + lVDS) l is the slope ID is the intercept VDS

23. Velocity Saturation At high electric fields, the average velocity of carriers is NOT proportional to the field; it saturates at ~107 cm/sec for both electrons and holes:

24. Current Saturation in Modern MOSFETs • In digital ICs, we typically use transistors with the shortest possible gate-length for high-speed operation. • In a very short-channel MOSFET, ID saturates because the carrier velocity is limited to ~107 cm/sec v is not proportional to E, due to velocity saturation

25. Consequences of Velocity Saturation 1. ID is lower than that predicted by the mobility model 2. ID increases linearly with VGS VT rather than quadratically in the saturation region

26. P-Channel MOSFET IDvs. VDS • As compared to an n-channel MOSFET, the signs of all the voltages and the currents are reversed: Note that the effects of velocity saturation are less pronounced than for an NMOSFET. Why is this the case? Short-channel PMOSFET I-V