Lithography ITWG Report ITRS Conference November 29, 2001 Santa Clara, CA

1. Lithography ITWG Report ITRS Conference November 29, 2001 Santa Clara, CA

2. Lithography ITWG Chairmen

3. Outline Lithography ITWG Report • Major changes from the 1999 ITRS. • Lithography requirements. • Difficult challenges. • Potential solutions. • Summary.

4. smask swafer = N/MEF Major changes from 1999 • Aggressive optical lithography results in large mask error factors (MEF). • MEF = 2.0 to 2.5 for dense lines. • Binary mask. • MEF = 3.0 to 3.5 for contacts. • Leads to much tighter linewidth requirements for masks.

5. Major changes from 1999 • The resist tables have been updated. • Features < 100 nm lead to new requirements in: • Defects. • Line-edge roughness (LER).

6. Major changes from 1999 • Optical lithography will be extended to the 65 nm node. • The insertion of Next Generation Lithography (NGL) is approaching. • Massive investments in development are required, which may affect timing. • NGL masks have some very different requirements from optical masks. • NGL mask tables are being inserted into the ITRS.

7. Major changes from 1999 • There are many new requirements that are very stringent or technology-specific. • EUV masks require multi-layer films with requirements for defects and reflectivity. • Extreme mask flatness is necessary for EUV. • Mask film stresses must be low and well controlled. • Membrane masks for EPL, x-ray, etc.

8. Lithography Requirements - Overview

9. Lithography Requirements - Overview

10. 500 350 1994 250 180 130 100 Final gate dimension (nm) 70 50 35 25 2001 18 13 95 03 09 11 13 97 99 01 05 07 Year Microprocessor Gate CDs 9 year acceleration!

11. Microprocessor Gate CDs • CDs must be controlled to between ± 10% of the final dimension. • Aggressive MPU gate shrinks are creating stringent requirements on metrology and process control. • CD control of 2 nm (3s) will be required for the 65 nm node in 2007.

12. Difficult Challenges: Near Term

13. Optical mask requirements

14. Difficult Challenges: Long Term

15. Potential Solutions EUV = extreme ultraviolet EPL = electron projection lithography ML2 = maskless lithography IPL = ion projection lithography PXL = proximity x-ray lithography PEL = proximity electron lithography Technologies shown in italics have only single region support

16. NGL masks

17. EUV masks

18. EPL masks

19. Lithography Costs Historical tool prices

20. Summary • Major changes are resulting from: • Pushing optical lithography to its limits. • Requires very tight mask CD control. • The introduction of next generation lithography (NGL). • Requires a new infrastructure. • Very aggressive gate shrinks. • Dimensions less than 100 nm drive new requirements. • Efforts are required to contain lithography costs.