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Glasgow Update. R. Bates. A. Blue, S Chambers, T. McMullen, C. Valentine & K. Wraight. Update. Electrical Characterisation I-V ’ s Temperature dependence Arrhenius plots C-V CCE Analysis s/ware Preliminary results. Current-Voltage characteristics. Summary.
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Glasgow Update R. Bates. A. Blue, S Chambers, T. McMullen, C. Valentine & K. Wraight
Update • Electrical Characterisation • I-V’s • Temperature dependence • Arrhenius plots • C-V • CCE • Analysis s/ware • Preliminary results
Current-Voltage characteristics Summary IV of all irradiated devices • IV of all non-irradiated devices • Temperatures -45 to 20C • IV of all irradiated devices (except for gammas) • -20C • Some -45C to -20C • Analysis on going
Capacitance - Voltage Set-up Non-irradiated (3 different samples) • 0 – 600V • ΔV : 5V, Δt : 10 s • integration time : 2 s • measurement frequencies: 10kHz, 100kHz, 1MHz • Compliance : 0.1mA • Model : C_sR_s • Vfd = 350V • Cfd = 24pF • (23.8,23.85,24.3pF)
Charge collection update • We had an issue with Alibava analysis for a while • Using newest version of Alibava DAQ • Data sets not being read by older analysis code (sin_preguntas and idk-ana – from Ljubljana) • New sin-preguntas does not give much information, only pulse height spectra • Edited idk-ana code to read new data format • This stalled testing as alignment is done by hand in our system and we need analyzed data to feedback on this • Second issue with HV breakdown at >700V was observed in irradiated devices • Eventually tracked down to a current path from the detector mount to system temperature sensor. Fixed! • In situ annealing verified without silicon sensor
Un-irradiated calibration BZ3C_P12 System calibrated with un-irradiated sensor (BZ3C_P12) +20C Full_CC = 101 ADC -20C Full_CC = 116 ADC (ignored 500V point) Note an issue with sensor breakdown at >550V, but fine for plateau Measurements of post –radiation resume 18/3/2014