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Lecture7 –More on Attacks. Rice ELEC 528/ COMP 538 Farinaz Koushanfar Spring 2009. Outline. More on side-channel attacks Fault injection attacks Generic attacks on cryptosystems . Slides are mostly courtesy of Michael Tunstall michael.tunstall@gemplus.com.
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Lecture7 –More on Attacks Rice ELEC 528/ COMP 538 Farinaz Koushanfar Spring 2009
Outline • More on side-channel attacks • Fault injection attacks • Generic attacks on cryptosystems Slides are mostly courtesy of Michael Tunstall michael.tunstall@gemplus.com
SPA example (cont’d) • Unprotected modular exponentiation – square and multiply algorithm
Statistical power analysis • Two categories • Differential power analysis (DPA) • Correlation power analysis (CPA) • Based on the relationship b/w power consumption & hamming weight of the data
Modeling the power consumption • Hamming weight model • Typically measured on a bus, Y=aH(X)+b • Y: power consumption; X: data value; H: Hamming weight • The Hamming distance model • Y=aH(PX)+b • Accounting for the previous value on the bus (P)
Differential power analysis (DPA) • DPA can be performed in any algo that has operation =S(K), • is known and K is the segment key The waveforms are caotured by a scope and Sent to a computer for analysis
DPA (cont’d) The bit will classify the wave wi • Hypothesis 1: bit is zero • Hypothesis 2: bit is one • A differential trace will be calculated for each bit!
DPA (cont’d) • The DPA waveform with the highest peak will validate the hypothesis
Correlation power analysis (CPA) • The equation for generating differential waveforms replaced with correlations • Rather than attacking one bit, the attacker tries prediction of the Hamming weight of a word (H) • The correlation is computed by:
Anti-DPA • Internal clock phase shift
Fault injection techniques • Transient (provisional) and permanent (destructive) faults • Variations to supply voltage • Variations in the external clock • Temperature • White light • Laser light • X-rays and ion beams • Electromagnetic flux
Provisional faults • Single event upsets • Temporary flips in a cell’s logical state to a complementary state • Multiple event faults • Several simultaneous SEUs • Dose rate faults • The individual effects are negligible, but cumulative effect causes fault • Provisional faults are used more in fault injection
Permanent faults • Single-event burnout faults • Caused by a parasitic thyristor being formed in the MOS power transistors • Single-event snap back faults • Caused by self-sustained current by parasitic bipolar transistors in MOS • Single-event latch-up faults • Creates a self sustained current in parasitics • Total dose rate faults • Progressive degradation of the electronic circuit
Fault impacts (model) • Resetting data • Data randomization – could be misleading, no control over! • Modifying op-code – implementation dependent