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My Career at University of Florida Sheng S. Li, Professor Department of Electrical Computer Engineering

Background. Education: BS EE: National Cheng-Kung University, Taiwan, 1962MS EE: Rice University, Houston, Texas, 1966 Ph.D.EE: Rice University, Houston, Texas, 1968Professional: (1968-2006 at UF)Assistant Professor, 1968-73, E.E.Dept. Associate Professor,1973-78 Professor, 1978-2006Electron

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My Career at University of Florida Sheng S. Li, Professor Department of Electrical Computer Engineering

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    1. My Career at University of Florida Sheng S. Li, Professor Department of Electrical & Computer Engineering Research Highlights (1968-2006)

    2. Background Education: BS EE: National Cheng-Kung University, Taiwan, 1962 MS EE: Rice University, Houston, Texas, 1966 Ph.D.EE: Rice University, Houston, Texas, 1968 Professional: (1968-2006 at UF) Assistant Professor, 1968-73, E.E.Dept. Associate Professor,1973-78 Professor, 1978-2006 Electronic Engineer, National Bureau of Standards (NBS), DC,1975-76 Visiting Professor, National Chiao-Tung University, Hsinchu Taiwan,1995 (7 months)/2002 (1 month)

    3. Books and Monographs Semiconductor Physical Electronics (Plenum,1993) (S. Li) Electrical Characterization of Silicon-on-Insulator Materials and Devices (Kluwer Academic,1995) (Li/Cristoloveanu) Intersubband Transitions in Quantum Wells: Physics and Devices (Kluwer Academic, 1998) (LI/Su) Semiconductor Physical Electronics (2nd edition, Springer, 2006) (S. Li)

    4. Research and Scholarly Achievements (I) Top 100 Research Achievement Award, University of Florida, 1989 Top 100 Research Achievement Award, University of Florida, 1990 Inaugural Professorial Excellent Program (PEP) award, University of Florida, 1996 University of Florida Research Foundation's (UFRF) Research Professorship Award, 2000-2003

    5. Research and Scholarly Achievements (II) Chair/co-chair of 2nd, 3rd, 5th, and 6th Int. Symposium on Long Wavelength Infrared Detectors and Arrays (1993,95’, 96’, 98’,99’ ECS Meetings) Co-chair of Int. Workshop on Intersubband Transitions in Quantum Wells-Physics and Applications. (1997) Editor/Co-editor of the above Conference Proceedings Published 153 journal papers and 140 conference papers One monograph book on SOI materials and devices 3 book chapters on QWIPs (96’,99’,03’) 2 NBS Special Publications (77’,79’) Short courses: One in China two in Taiwan (90’,93’,02’) Supervised 35 Ph.D. and 45 M.S. students

    6. Highlights of Research Studies of transport properties in semiconductor materials (DARPA,NBS, NSF, AFOSR) DLTS characterization of radiation induced defects in GaAs solar cells and semiconductor materials (NASA) Defect characterization in SOI materials and devices (Rome AFB, Harris Semiconductors) Quantum Well Infrared Photodetectors (QWIPs) for LWIR staring Focal Plane Array (FPA) applications. (1989-2004) (DARPA, ONR, AFRL, ARL, ARO, BMDO, ADT) CuInSe2 (CIS) thin film solar cells. (1991-2006) (NREL)

    7. Quantum Well Infrared Photodetectors (QWIPs) for Long Wavelength Infrared Imaging Arrays Fundamentals and Practical Applications

    8. Applications of IR Detector Arrays

    9. Applications of VLWIR (> 14 micron) Detectors

    10. QWIP Research Initiative In 1990 DARPA issued a RFP called for the development of GaAs/AlGaAs QWIP FPA for LWIR imaging arrays applications DARPA funded four research projects: UF (Li), AT&T Bell Lab, Rockwell, and Martin- Marietta) for 3 years to develop new QWIP devices and QWIP FPAs

    16. b

    17. Calculated Peak Detection Wavelengths for an n-type GaAs/AlxGa1-xAs QWIP with AlAs Mole Fraction x

    18. Schematic diagram of the conduction band of a bound-to quasi-bound (BQB) transition QWIP under bias condition

    27. Layer diagram of four-band QWIP device structure and the deep groove 2-D periodic grating structure. Each pixel represent a 640x128 pixel area of the four-band focal plane array

    28. QWIP Technology for IR FPA 1. Advantages: Highly uniform large format (640x480) GaAs/AlGaAs QWIP Focal Plane Array (FPA) can be fabricated for LWIR imaging array applications. High yield and reproducibility using GaAs QWIP Tech. Extremely low NEDT (10-20 mK/K) has been achieved in GaAs E-QWIP. 2. Drawback: High dark current limits the operating temperature for QWIP to around 80K for 9mm detection peak.

    29. An In0.6Ga0.4As/GaAs Quantum Dot Infrared Photodetector (QDIP)

    30. Cross- Sectional TEM for an In0.6Ga0.4As/GaAs QDIP with High Operating Temperature (250 K)

    31. Spectral Responsivity for an InGaAs/GaAs QDIP

    32. QWIP Focal Plane Arrays (FPAs) using In- bump Bonding to Silicon CMOS MUX

    33. QWIP Focal Plane Array Using In-bump bonding on Si CMOS MUX

    34. QWIP Phoenix Camera using JPL QWIP FPA

    36. Palm Size QWIP Camera by JPL

    37. Image of Fire Taken with Dual Band QWIP Camera

    39. Image of Stars taken with QWIP Camera

    44. Recent Feedback from former students

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