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Y.C. Jiang

APPLIED PHYSICS LETTERS 93, 121107 2008. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers. Jinqiao Xie, Xianfeng Ni, Qian Fan, Ryoko Shimada, Ümit Özgür, and Hadis Morkoç. Y.C. Jiang. Outline. Introduction

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Y.C. Jiang

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  1. APPLIED PHYSICS LETTERS 93, 121107 2008 On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers Jinqiao Xie, Xianfeng Ni, Qian Fan, Ryoko Shimada, Ümit Özgür, and Hadis Morkoç Y.C. Jiang

  2. Outline Introduction Experiments Results & discussions Conclusion Reference

  3. Introduction LEDs produce high luminous flux which necessitates high efficiency at high current densities. 可能會影響的因素有歐傑復合、壓電場極化…等

  4. Experiments 2nm u-In0.20GaN0.80 20nm P-Al0.15GaN0.85 60nm N-In0.01GaN0.99 12nm In0.01GaN0.99 FIG. 1. Schematic of LED structures investigated. In all the samples, the 2 nm InGaN QWs were undoped, and the 12 nm (In)GaN barriers were either left undoped, or p-doped with Mg. An ~10 nm p-AlGaN was also included as an electron barrier in all the samples. The peak of EL spectrum is at ~420 nm.

  5. Experiments

  6. Results & discussions FIG. 2. Radiative efficiency, integrated PL intensity (PPL) divided by the excitation density (Pexc) of the MQW active regions of the LED structures vs the optical carrier generation rate for the samples with undoped barriers.

  7. FIG. 3. Integrated EL intensity open squares and relative EQE solid circles vs injection current density measured under pulsed conditions (1% duty cycle, 1 KHz) for LED structures with (a) undoped GaN barriers, (b) undoped InGaN barriers, (c) undoped InGaN barriers and without the EBL, (d) with Mg-doped p-InGaN barriers, and (e) undoped InGaN barriers and lightly doped n-GaN LD-n-GaN layer. The shift of EQE peaks to higher current densities with the inclusion of an EBL or p-InGaN barriers or LD-n-GaN layer supports the argument that electron leakage is the cause for efficiency droop. EL peak position beyond 900 A/cm2 is observed(熱影響 <redshift>)

  8. Conclusion p-doping In-GaN barriers or reducing the doping in the n-GaN below the QW region increase the current density where the peak efficiency occurs to 900 and 550 A/cm2, respectively. Additionally, inclusion of an EBL is essential regardless of the structure and was observed to increase the current density at which the EQE peaks due to reduced electron leakage.

  9. Reference Jinqiao Xie, Xianfeng Ni, Qian Fan, Ryoko Shimada, Ümit Özgür, and Hadis Morkoç , “On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers,” APPLIED PHYSICS LETTERS 93, 121107 2008

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