Advancing Semiconductor Processes With Novel Extreme UV Photoresist Materials

1. AdvancingSemiconductorProcessesWith NovelExtremeUVPhotoresistMaterials Introduction Theever-growingdemandforfaster,smaller,andmoreefficientelectronic deviceshasfueledthesemiconductorindustryrelentlesspursuitof innovation.Onecrucialtechnologyatthe heartofsemiconductor manufacturingis ExtremeUltravioletLithography(EUVL)to achieve smallerfeaturesizeswithhigherresolution,leadingtominiaturizeddevices. Researchers and companies across the globe are focusing on developing novelExtreme UV(EUV)photoresistmaterialsthatsupportEUVL patterning at nanometer-scale resolutions and improve the performances ofsemiconductordevices. Lithography is a crucial step in semiconductor fabrication, where patterns are transferredontowafersto createintegratedcircuitsandother microstructures.Traditionallithographyreliesondeepultravioletlight,but asintegratedcircuitsreachsingle-digitnanometrescales,EUVlithography becomes imperative. EUV light operates at wavelengths around 13.5 nanometres, enabling the printing of significantly smaller features with highprecision.EUVphotoresistsarelight-sensitivematerialsutilizedinthe semiconductormanufacturingprocess,particularlyin advanced lithography techniques. These materials must withstand high-energy EUV photonsandprovidehigh-resolutionpatterningcapabilities.Some challenges for developing EUV photoresist materials are that they need to be highly sensitive to the short wavelengths, achieving high resolution is essential for producing intricate and small-scale patterns under 3nm, minimizing line-edge roughness, and outgassing (contamination) creates issues formanufacturers inmaintainingproduction.

2. These innovative materials are often classified as Chemically Amplified Photoresists (CARs), Non-Chemical Amplified Resists, Inorganic EUV Photoresists, and Hybrid EUV Photoresists depending on their formulations or compositions. When exposed to EUV light, they undergo chemical or physical changes, enablingthe accurate transferofpatterns onto surfaces. • UnderstandingExtremeUVPhotoresistMaterial • EUV photoresist materials are light-sensitive substances that undergo chemicalchangeswhenexposedtohigh-energyEUVphotons.EUVphotons generatephotoacidsfromaphotosensitivecompound.Thisacidcatalyzes a deprotection reaction in the resist polymer, making it more soluble in the developer solution. The amplified reaction enhances sensitivity and enables high-resolution patterning. As semiconductor nodes advance to smaller scales, maintaining resolution, sensitivity, and pattern fidelity becomesmorecomplexandchallenging.Researchisongoingtodevelopnew materials, mechanisms,andprocessingtechniquestoaddress these challenges and enablefurtherminiaturization. • Chemical Amplified Resist: Chemically amplified photoresists are the mostcommonlyusedEUVphotoresists.Theyemployaphotoacidgenerator (PAG) thatproduces acid uponexposure to EUV photons.This acid catalyzesachemicalreaction intheresist,leadingtothedissolutionofthe exposedregionsduringthedevelopmentprocess.CARsareknownfortheir high sensitivity, making them suitable for low-dose EUV exposure and improving throughput during semiconductor manufacturing. They may find applicationsin opticaldevices,displays,and advancedpackaging. • InorganicEUVPhotoresists: Inorganicphotoresistmaterialswith different EUV absorption coefficients and high etching are important to solve some existing problems. Therefore, many researchers have begun to study the use of inorganic materials in the field of photoresists. These materials differ from organic CARs as they are composed of inorganic materials,suchasmetaloxidesormetal-containingcompounds.Theywork

3. by applying the metal oxide system with acrylic acid as the organic ligand to EUV lithography. Inorganic photoresists are expected to offer higher thermal stability and reduced outgassing than their organic counterparts. Theymay findapplicationsinextremeenvironmentsorspecialized semiconductorprocesses. • Non-chemicallyAmplifiedResists:UnlikeCARs,non-chemicallyamplified photoresists do not rely on acid-catalyzed reactions. Instead, they directly undergoaphotolyticreactionuponEUVexposure,resultinginachangein solubility. These materials often require higher doses of EUV light for patterning and are being explored for specific applications and process requirements. • Hybrid EUV Photoresists: Hybrid EUV photoresists combine organic and inorganicelementstoleveragetheadvantagesofbothmaterialtypes.These materials work by selecting the resins selected for the purification step aftertheligandexchangereactionaspolystyreneresinsfunctionalizedwith tertiary amines, piperidine, and dimethylamine. These materials aim to provide enhanced sensitivity, resolution, and thermal stability, addressing some ofthelimitationsofpurelyorganicorinorganicphotoresists. • KeyChallengesinEUV PhotoresistDevelopment • EUVSensitivity: Sensitivityis oneofthekeychallengesofEUV lithography;developingandoptimizingphotoresistmaterialsthat effectively absorb and react with EUV light to produce precise patterns on semiconductor wafers is difficult. EUV photons are scarce and expensive, necessitating photoresist materials with high sensitivity to achieve an adequatethroughputof100to120wafersperhourduring manufacturing. • Resolution and LER: As feature sizes reduce, maintaining high resolution without excessive line-edge roughness (LER) becomes problematic. An importantpotentialsourceofLERforEUVresists isphotonshotnoisedue

4. tothehighphoton energy.The LERchallengeinvolvesminimizing irregularities or roughness along the edges of the developed photoresist linesthatformthetransistorfeatures.ExcessiveLERcanleadtovariations intransistorperformanceandreducedchipyield.Themanufacturersneed to optimize the photoresist formulation and process conditions to achieve an LER of 2 nm but a sensitivity of only 70 mJ/cm and smoother, more preciseedges onthetransistorfeatures. • Outgassing: Theoutgassingproblemin EUVlithography refersto releasing volatile organic compounds (VOCs) or other materials from the photoresistduring exposureto EUVlight. Theseoutgassedmaterials potentiallycontaminatethesurroundingenvironment,includingtheoptics and mirrors used in the EUV lithography equipment. Contamination reducesequipmentperformanceandproductionyield,alongsideincreasing maintenancerequirements.Controllingandminimizingoutgassingis critical to maintaining the reliability and efficiency of the entire EUV lithographyprocess. • ThermalStability:EUVexposuregeneratesconsiderableheat,demanding stable photoresistmaterials underhigh-energyconditions.Many applicationsdemandcoatingswithexcellentthermalstability.Most commerciallyavailableremoversrapidlydissolveresistlayersafterthermal loadsof upto130°C. • Promising Advancements inNovelEUVPhotoresistMaterials • HighSensitivity,LowDoseMaterials: Researchersareexploring innovative chemically amplified photoresists that react strongly to EUV photons even at lower doses, improving throughput to 100 wafers per hourand reducingmanufacturingcosts. • ImprovedResolutionandLERControl:Novelmaterialssuchaschemically amplifiedandinorganicresists aredesignedto mitigateLER while maintaininghigh-resolutionpatterningcapabilities.Advancedchemical

5. atomic resist compositions and unique polymer structures play a vital role in achieving higher sensitivity to EUV light, improving contrast, and reducing LERbelow 2nm. • Reduced Outgassing: The development of low-outgassing photoresists ensures cleaner EUV exposure, resulting in a higher yield and improved semiconductordevicereliability.Reducingoutgassingis crucialto maintaining the cleanliness and integrity of the EUV lithography process, which is highly sensitive to contaminants. Semiconductor manufacturers collaborate closely with material suppliers and equipment manufacturers to ensure that the photoresists and other materials used in the EUV lithographyprocessmeetstringentoutgassingrequirementsandcontribute toproducinghigh-qualitysemiconductordevices. • Thermal Stability Solutions: To tackle the thermal challenges of EUV lithography, researchers are bringing engineering materials with enhanced thermal stability, allowing for more prolonged exposure times without compromising performance. • CollaborationandFutureProspects • Developing andoptimizing novelEUVphotoresistmaterialsrequires collaboration between semiconductor manufacturers, material suppliers, and research institutions. The semiconductor industry’s pursuit of next- generation devices relies on the continual advancement and refinement of EUV lithographytechnology. • The successful implementation of novel EUV photoresist materials will unlock numerous possibilities for semiconductor technology. Smaller and more powerful devices will revolutionize various sectors, including data centers, healthcare, automotive, and artificial intelligence. The impact is notonlylimitedtotraditionalcomputing,allowingsemiconductor manufacturers to produce chips with smaller feature sizes. This leads to highertransistordensity,improvedperformance,andlowerpower

6. consumption in electronic devices. It also enhances the capabilities of semiconductor devices, enabling the production of advanced processors, memorydevices,andsensorsthatdrivetechnologicalinnovationinvarious industries. Conclusion NovelExtremeUVphotoresistmaterialsrepresentacrucialstepping-stone in the relentless drive to enhance semiconductor technology. The ability to print ever smaller and more precise features on semiconductor wafers is vitaltomeetingthedemandsofthedigitalage.Collaborativeresearchand development in this field promise a bright future for the semiconductor industry, ensuring the continuous evolution of electronic devices that empowerand enrichourlives. Developing novel EUV photoresist materials requires collaboration among material scientists, chemists, physicists, and engineers. Material suppliers, semiconductor manufacturers, and research institutions work in tandem to design, characterize, and test these materials under demanding EUV exposure conditions. The field of EUV lithography and photoresist development is continuously evolving. Researchers are exploring a wide range of material innovations, includinginorganicresists,nanostructuredmaterials,andhybridpolymers. Asthe semiconductorindustrystrivesforeven greaterlevelsof miniaturization and performance, the pursuit of novel EUV photoresist materialsremainsanactiveareaofresearchand innovation. Learnmoreabouthowwecanempoweryourorganizationinthedynamic world ofSemiconductors byemailing usatcontact@iebrain.com. AboutIngeniouse-Brain:– Ingenious e-Brain provides high-quality, customized, and cost-effective TechnologyResearch,BusinessResearch,andIntellectualProperty

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