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Semiconductor Device Modeling and Characterization – EE5342 Lecture 24 – Spring 2011

Semiconductor Device Modeling and Characterization – EE5342 Lecture 24 – Spring 2011. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. The npn Gummel-Poon Static Model. C. R C. I CC - I EC = IS ( exp(v BE /NFV t - exp(v BC /NRV t )/Q B. I BR. B. R BB. I LC.

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Semiconductor Device Modeling and Characterization – EE5342 Lecture 24 – Spring 2011

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  1. Semiconductor Device Modeling and Characterization – EE5342 Lecture 24 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/

  2. The npn Gummel-Poon Static Model C RC ICC -IEC = IS(exp(vBE/NFVt - exp(vBC/NRVt)/QB IBR B RBB ILC B’ IBF ILE RE E

  3. IBF = ISexpf(vBE/NFVt)/BF ILE = ISEexpf(vBE/NEVt) IBR = ISexpf(vBC/NRVt)/BR ILC = ISCexpf(vBC/NCVt) QB = (1 + vBC/VAF + vBE/VAR ) {½ + [¼ + (BFIBF/IKF + BRIBR/IKR)]1/2 } Gummel Poon npnModel Equations

  4. Forward GummelData Sensitivities a Region a - IKFIS, RB, RE, NF, VAR Region b - IS, NF, VAR, RB, RE Region c - IS/BF, NF, RB, RE Region d - IS/BF, NF Region e - ISE, NE vBCx = 0 c iC b d iB e iC(A),iB(A) vs. vBE(V)

  5. Simple extraction of NF, NE from fg data Data set used NF=1 NE=2 Flat Neff region from iC data = 1.00 for 0.195 < vD < 0.390 Max Neff value from iB data is 1.881 for 0.180 < vD < 0.181 iB data iC data NEeff vs. vBEext

  6. Simple extractionof IS, ISE from data Data set used • IS = 10f • ISE = 10E-14 Flat ISeff for iC data = 9.99E-15 for 0.230 < vD < 0.255 Max ISeff value for iB data is 8.94E-14 for vD = 0.180 iC data iB data ISeff vs. vBEext

  7. Region (d) fgData Sensitivities Region d - IS/BF, NF iB = IBF + ILE = (IS/BF)expf(vBE/NFVt) + ISEexpf(vBE/NEVt)

  8. Simple extractionof BF from data • Data set used BF = 100 • Extraction gives max iC/iB = 92 for 0.50 V < vD < 0.51 V 2.42A< iD < 3.53A • Minimum value of Neff =1 for slightly lower vD and iD iC/iB vs. iC

  9. Region (a) fgData Sensitivities Region a - IKFIS, RB, RE, NF, VAR iC = bFIBF/QB = ISexp(vBE/NFVt)  (1-vBC/VAF-vBE/VAR ){IKF terms}-1 If iC > IKF, then iC ~ [IS*IKF]1/2exp(vBE/2NFVt)  (1-vBC/VAF-vBE/VAR )

  10. Region (c) fgData Sensitivities Region c - IS/BF, NF, RB, RE iB = IBF + ILE = (IS/BF)expf(vBE/NFVt) + ISEexpf(vBE/NEVt)

  11. RC vBCx vBC - iB + + RB vBE - RE iE BJT CharacterizationReverse Gummel vBEx= 0 = vBE+ iBRB- iERE vBCx = vBC+iBRB+(iB+iE)RC iB = IBR + ILC = (IS/BR)expf(vBC/NRVt) + ISCexpf(vBC/NCVt) iE = bRIBR/QB = ISexpf(vBC/NRVt) (1-vBC/VAF-vBE/VAR ) {IKR terms}-1

  12. Sample rg data forparameter extraction • IS=10f • Nr=1 • Br=2 • Isc=10p • Nc=2 • Ikr=.1m • Vaf=100 • Rc=5 • Rb=100 iB data iE data iE, iB vs. vBCext

  13. Reverse GummelData Sensitivities Region a - IKRIS, RB, RC, NR, VAF Region b - IS, NR, VAF, RB, RC Region c - IS/BR, NR, RB, RC Region d - IS/BR, NR Region e - ISC, NC c vBCx = 0 a d e b iB iE iE(A),iB(A) vs. vBC(V)

  14. Region (b) rgData Sensitivities Region b - IS, NR, VAF, RB, RC iE = bRIBR/QB = ISexp(vBC/NRVt) (1-vBC/VAF-vBE/VAR ){IKR terms}-1

  15. Region (a) rgData Sensitivities Region a - IKRIS, RB, RC, NR, VAF iE=bRIBR/QB~[ISIKR]1/2exp(vBC/2NRVt) (1-vBC/VAF-vBE/VAR )

  16. Region (e) rgData Sensitivities Region e - ISC, NC iB = IBR + ILC = IS/BRexpf(vBC/NRVt) + ISCexpf(vBC/NCVt)

  17. Region (d) rgData Sensitivities Region d - BR, IS, NR iB = IBR + ILC = IS/BRexpf(vBC/NRVt) + ISCexpf(vBC/NCVt)

  18. Region (c) rgData Sensitivities Region c - BR, IS, NR, RB, RC iB = IBR + ILC = IS/BRexpf(vBC/NRVt) + ISCexpf(vBC/NCVt)

  19. References 1 OrCAD PSpice A/D Manual, Version 9.1, November, 1999, OrCAD, Inc. 2 Semiconductor Device Modeling with SPICE, 2nd ed., by Massobrio and Antognetti, McGraw Hill, NY, 1993. * Semiconductor Physics & Devices, by Donald A. Neamen, Irwin, Chicago, 1997. ** Modeling the Bipolar Transistor, by Ian Getreau, Tektronix, Inc., (out of print).

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