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Photovoltaics. Lecture 6. CIGS.

Photovoltaics. Lecture 6. CIGS. From previous lecture:. Contacts resistance and recombination. Useful recombination limits. Thickness dependant efficiency. TOM TIEDJE et al., IEEE TRANS. ON EL. DEVICES, VOL. ED-31, NO. 5 , MAY 1984. Photovoltaics. Lecture 6. CIGS.

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Photovoltaics. Lecture 6. CIGS.

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  1. Photovoltaics. Lecture 6. CIGS. From previous lecture: Contacts resistance and recombination. Useful recombination limits. Thickness dependant efficiency. TOM TIEDJE et al., IEEE TRANS. ON EL. DEVICES, VOL. ED-31, NO. 5 , MAY 1984

  2. Photovoltaics. Lecture 6. CIGS. Few words on amorphous Si: Hydrogen improves properties. Semi-direct band gap, with exponential edges. Absorption up to 2.5 times higher than in crystalline Si.

  3. Photovoltaics. Lecture 6. CIGS. Few words on amorphous Si: Staebler-Wronski Effect: Significant decline in the efficiency of a-Si:H solar cells during first few hundred hours of illumination 1.7eV 1.1eV

  4. Photovoltaics. Lecture 6. CIGS. Cu(Inx,Ga1-x)Se2 (CIGS) solar cells:

  5. Photovoltaics. Lecture 6. CIGS. Solar cells industry: H.S. Ullal and B. von Roedern, NREL/CP-520-42058, September 2007

  6. Photovoltaics. Lecture 6. CIGS. Cu(Inx,Ga1-x)Se2 (CIGS): C b-phase CuIn3Se5 R. Herberholz et al.,Euro. Phys. J. AP 6, 131 (1999)

  7. Photovoltaics. Lecture 6. CIGS. Cu(Inx,Ga1-x)Se2 (CIGS): E (x)[eV] = 1,02 +0,67x + 0,11x(x-1)

  8. Photovoltaics. Lecture 6. CIGS. Cu(Inx,Ga1-x)Se2 (CIGS):

  9. Photovoltaics. Lecture 6. CIGS. Cu(Inx,Ga1-x)Se2 (CIGS):

  10. Photovoltaics. Lecture 6. CIGS. Cu(Inx,Ga1-x)Se2 (CIGS):

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