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Jens Verbeeck TWEPP 2010

Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance. Jens Verbeeck TWEPP 2010. Outline. Introduction Radiation and temperature effects Constant g m amplifier Matching structure Conclusions. Outline. Introduction

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Jens Verbeeck TWEPP 2010

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  1. Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance Jens Verbeeck TWEPP 2010

  2. Outline • Introduction • Radiation and temperature effects • Constant gm amplifier • Matching structure • Conclusions Presentation: Jens Verbeeck

  3. Outline • Introduction • Radiation and temperature effects • Constant gm amplifier • Matching structure • Conclusions Presentation: Jens Verbeeck

  4. Introduction • Development of optical instrumentation and communication for nuclear and high temperature environments • Applicable for • MYRRHA • ITER • LHC • Space Presentation: Jens Verbeeck

  5. Optical instrumentation PD: Photo diode TIA: Transimpedance amplifier LA: Limiting amplifier AGC: Automatic gain controller TDC: Time to digital converter Presentation: Jens Verbeeck

  6. Optical instrumentation • Goal • LIDAR with psaccuracy, distance =10m • Current status • TDC with ps resolution developed and irradiated up to 5MGy (Ying Cao) • November tape-out receiver channel Presentation: Jens Verbeeck

  7. Outline • Introduction • Radiation and temperature effects • Constant gm amplifier • Matching as a function of radiation dose • Conclusions Presentation: Jens Verbeeck

  8. Radiation : Introduction TID Oxide: Net positive charge trapped at the oxide • Si-SiO2 interface: • vg > 0 => +∆vth (NMOS) • vg < 0 => -∆vth (PMOS) [Hugh J. Barnaby] [Hugh J. Barnaby] Presentation: Jens Verbeeck

  9. Temperature: effects Decrease of mobility Increase of leakage current [M. Willander] [P. C. de Jong et. al.] T Decrease of VTH Decrease of gm Presentation: Jens Verbeeck

  10. Outline • Introduction • Radiation and temperature effects • Constant gm amplifier • Matching as structure • Conclusions Presentation: Jens Verbeeck

  11. Opticalreceiver • Classical building blocks • Transimpedance amplifier (TIA) • Post amplifier (PA) • Time to digital convertor (TDC) Presentation: Jens Verbeeck

  12. Constant gm amplifier: Why? • Radiation/temperature causes variation in TIA parameters • gmand routvariable in formula A0 • Make gain independent of gm and rout Presentation: Jens Verbeeck

  13. Constant gm amplifier: Why? Radiation up to 300 kGy (M. Manghisoni et al.) Temperature (-40 up to 130°C) Presentation: Jens Verbeeck

  14. Constant gm amplifier: Operation • RDSTOT >> RL • Transistor length ↑ • Trade-off: BB <=> temp/RAD tolerance [B.Razavi] [Sean Nicalson et al.] Presentation: Jens Verbeeck

  15. Temperature simulations • Degradation with bias : 2.5 % Temperature sweep from 0°Cto 100°C Gain =14dB GBW = 2.5Ghz BB = 500MHz Presentation: Jens Verbeeck

  16. Radiation simulations • Degradation with bias : 0.85 % Amplifier irradiated up to 300kGy Presentation: Jens Verbeeck

  17. Results Temperature drift5.6 % or 343 ppm/°C Radiation up to 100 kGy Gain degradation 4.5% Presentation: Jens Verbeeck

  18. Results: Radiation Cause degradation? • VTHsens= Standard deviation • beforeradiation of M1 and M2 • ∆ VTHsens= Variation of VTHsens Impact of a ∆VTHsens of 10% on the gain of the amplifier. Large VGS –VTH for high radiationtolerance gm = 2*IDS/(VGS-VTH) => IDS↑↑ & VDSsat↑↑ Presentation: Jens Verbeeck

  19. Layout Presentation: Jens Verbeeck

  20. Outline • Introduction • Radiation and temperature effects • Constant gm amplifier • Matching structure • Conclusions Presentation: Jens Verbeeck

  21. Matching • Standard deviation between identical components fabricated on the same chip =>small statistic variations = MISMATCH • Good matching • good PSRR, CMRR • Important for replica biasing • Reduces offset • Matching of Vth depends strongly on area transistor Presentation: Jens Verbeeck

  22. Matching • Layout transistors on chip • Drains connected in each column • Gates connected in each row • Shared source and bulk • 6 regular transistors, 6 Enclosed layout transistors [G. Annelie et al.] Presentation: Jens Verbeeck

  23. Radiation effects up to RD of 100kGy Regular NMOS transistors • Decrease of VTH • Rebound effect • RINCE effect [F. Faccio] • Different effect for large gates • Radiation Induced • Narrow Channel Effect • Standard deviation VTH –shift! => • No significant effects ELT transistors Presentation: Jens Verbeeck

  24. Outline • Introduction • Radiation and temperature effects • Constant gm amplifier • Transistor measurements • Conclusions Presentation: Jens Verbeeck

  25. Conclusions • Effects of radiation and temperature • Change of transistor parameters • Varying gain • Gain can be held stable with constant gm amplifier • BW and GBW of optical receiver guaranteed • Open loop control • Generate bias voltages for whole chip with gm biasing • Trade off: bandwidth  temperature tolerance • Trade off: current consumption & voltage headroom  rad. Tolerance • Larger VGS-VTH => VDSsat ↑↑  difficult to keep transistors in saturation at high temperatures. • Matching results • Decrease of VTH • VTH-shift depending on transistor width • Standard deviation VTH –shift Presentation: Jens Verbeeck

  26. Questions ? Acknowledgments to: Presentation: Jens Verbeeck

  27. References • M. Manghisoni, L. Ratti, V. Re and V. Speziali, “Radiation hardness perspectives for the design of analog detector readout circuits in the 0.18-µm CMOS Generation”, Transactions on nuclear science, VOL. 49 NO. 6, December 2002 • Hugh J. Barnaby, “Total-Dose Effects in Modern Integrated Circuit Technologies” IEEE NSREC, 2005 • F. Faccio, G. Cervelli, “Radiation-Induced Edge effects in Deep Submicron CMOS transistors”, Transactions on nuclear science, VOL. 52 NO. 6, December 2005 • M. Willander and H. L. Hartnagel (eds.), High Temperature Electronics, Chapman & Hall, London, 1997. • P. C. de Jong, G. C. M. Meijer, and A. H. M. van Roermund, “A 300 °C dynamic feedback instrumentation amplifier,” IEEE J. Solid-State Circuits, vol. 33, no.12, pp. 1999-2009, Dec. 1998. • Sean Nicalson and KhomanPhang, “Improvements in biasing and compensation of cmosopamps”, ISCAS 2004 • B. Razavi, “Design of analog integrated circuits” • G. Anelli et al.,“ Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: Practical design aspects,” IEEE Trans. Nucl. Sci., vol. 46, no. 6, pp. 1690–1696, Dec.1999. Presentation: Jens Verbeeck

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