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Atomic Structure Analysis of Diamond-like Carbon Films. S.-H. Lee, S.-C. Lee, H.-S. Ahn, K.-R. Lee Korea Institute of Science and Technology. 윤덕용 교수님 정년퇴임 및 최고과학기술자상 수상 기념 심포지움 ( 한국세라믹스학회 , 서울시립대 , 2005. 4. 22). Bond Structure of Carbon. 1S 2 2S 2 2P 2. Hard disk. Heart valve.
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Atomic Structure Analysis of Diamond-like Carbon Films S.-H. Lee, S.-C. Lee, H.-S. Ahn, K.-R. Lee Korea Institute of Science and Technology 윤덕용 교수님 정년퇴임 및 최고과학기술자상 수상 기념 심포지움 (한국세라믹스학회, 서울시립대, 2005. 4. 22)
Bond Structure of Carbon 1S2 2S22P2
Hard disk Heart valve What is DLC ? • Amorphous Solid Carbon Film • Mixture of sp1, sp2 and sp3 Hybridized Bonds • High Content of Hydrogen (20-60%) • Synonyms • Diamond-like Carbon • (Hydrogenated) amorphous carbon (a-C:H) • i-Carbon • Tetrahedral Amorphous Carbon
2-D Analogy of Structure ta-C a-C:H
High Residual Compressive Stress Film Deposition
2-D Analogy of the Structure Structure and Mechanical Properties • Hardness • 3-D interlink of the atomic bond network • Residual Stress • Distortion of bond angle and length • Both are dependent on the degree of 3-D interlinks.
Hardness Hardness and Residual Stress
Hardness Hardness and Residual Stress
Stress Reduction by Si Incorporation C.-S. Lee et al, Diam. Rel. Mater., 11 (2002) 198-203
Brenner force field for C-C bonds Tersoff force field for C-Si and Si-Si bonds Diamond substrate : 6a0 x 4.75a0 x 6a0 1,368 atoms with 72 atoms per layer Deposition Total 2,000 atoms Incident Kinetic Energy : 75 eV for both C and Si Si concentration : 0.5 % ~ 20 % Molecular Dynamics Simulation Deposited atoms created on this plane Fully Relaxed Layer Fixed Layer
Snapshots after Deposition 0.0 % 3.0 % 0.5 % 5.0 % 1.0 % 10.0 % 2.0 % 20.0 %
Residual Compressive Stress Experiment : C.-S. Lee et al, Diam. Rel. Mater., 11, 198 (2002).
Atomic Bond Structure MD Simulation Raman G-peak Position Experiment : C.-S. Lee et al, Diam. Rel. Mater., 11 (2002) 198-203
: Silicon atom : Carbon atom : Atoms in calculation Effect of Si Incorporation
Bond Angle Distribution 93.1 Pure ta-C ta-C:Si
W-DLC by Hybrid Ion Beam Deposition Wn+ H+, Cm+ Sputter gun: Third elements addition to DLC (W, Ti, Si …); Ion gun: Easy controlling the ion bombardment energy with high ion flux. A.-Y. Wang et al, Appl. Phys. Lett., 86, 111902 (2005).
Stress & Mechanical Properties 170±15 GPa 21±3 GPa
-W2C (101) 3.6 1.9 4 nm 4 nm 4 nm -W2C(101) 2.8 8.6 -W2C(102) 4 nm TEM Microstructures Nano-crystalline -W2C phases evolve. W atoms are dissolved in a-C:H matrix. Amorphous to crystalline WC1-x transition occurs. -W2C
Ip/Is = 0.550.1 Raman & EELS Spectra
-W2C (101) 3.6 1.9 4 nm 4 nm 4 nm -W2C(101) 2.8 8.6 -W2C(102) 4 nm TEM Microstructures Nano-crystalline -W2C phases evolve. W atoms are dissolved in a-C:H matrix. Amorphous to crystalline WC1-x transition occurs. -W2C
H H C C W C Role of W atoms- ab initio calculation
Conclusions • Various properties of a-C films generated by MD simulation agrees well with those of experimentally obtained a-C films. • Brenner force field for C-C bond • Tersoff force field for Si-Si and Si-C bond • Stress reduction mechanism based on the atomic scale structure analysis • Small amount of Si incorporation in a-C network prohibits carbon atoms from locating at a metastable site. • W atoms dissolved in a-C matrix play a role of pivot site where the atomic bond distortion can occur without inducing a significant increase in elastic energy.