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A CMOS Active Balun Using Bond Wire Inductors and a Gain Boosting Technique

A CMOS Active Balun Using Bond Wire Inductors and a Gain Boosting Technique. Dong Ho Lee; Jeonghu Han; Changkun Park; Songcheol Hong; Microwave and Wireless Components Letters, Volume 17, Issue 9, Sept. 2007 Page(s):676 - 678. 指導老師：林志明 教授 級別 ： 碩二

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A CMOS Active Balun Using Bond Wire Inductors and a Gain Boosting Technique

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  1. A CMOS Active Balun Using Bond Wire Inductors and a Gain Boosting Technique Dong Ho Lee; Jeonghu Han; Changkun Park; Songcheol Hong; Microwave and Wireless Components Letters,Volume 17, Issue 9, Sept. 2007 Page(s):676 - 678 指導老師：林志明 教授 級別：碩二 學生：張家瑋

  2. Outline • Abstract • Introduction • Active Balun • Implementation And Experimental Results • Conclusion • Reference

  3. Abstract • Single-ended input and differential outputs • Fabricated in 0.18μm CMOS process • The gain is 9.3 dB at 1.8 GHz • Supply Voltage 3v • consumes 9 mA • Phase and the amplitude error are less than 2° and 1 dB respectively

  4. Introduction • Differential circuits need Balun at their inputs to transform a single-ended signal to differential signals. • Passive Balun ‧small phase and amplitude errors ‧inevitable insertion losses ‧quite bulky • Active Balun ‧small size ‧high gain • This letter presents a novel active balun with bond wire inductors for 3-V supply GSM transmitter applications

  5. Active Balun

  6. Assume that the bond wire inductances L1 and L2 are equal to L By choosing L and C to satisfy the following relationship： than

  7. The voltage gain of a CG amplifier with the body effect is where gm , gmb , ro , and RL are the transconductance , the body effect transconductance , the drain - source resistance of the transistor, and the output load resistance, respectively.

  8. Body-source cross-coupled configuration In this case, the body effect is effective only on ac.

  9. Implementation And Experimental Results Microphotograph of the Balun

  10. Conclusion • An active Balun for the input stages of differential circuits is presented • Used a body-source cross-coupled configuration to improve the gain • Active Balun achieved a gain of 9.3dB at 1.8GHz • Phase and amplitude errors of less than 2° and 1 dB respectively from 1.0 to 1.96 GHz • The active Balun with a small sizeis suitable for the input stages of RF circuits

  11. References • [1] H. Y. D. Yang and J. A. Castaneda, “Design and analysis of on-chip symmetric parallel-plate coupled-line balun for silicon RF integrated circuits,” in IEEE MTT-S Int. Dig., Philadelphia, PA, Jun. 2003, vol. 1, pp. A13–A16. • [2] C.-S. Lee, M.-G. Kim, J.-J. Lee, K.-E. Pyun, and H.-M. Park, “A low noise amplifier for a multi-band and multi-mode handset,” in IEEE RFIC Symp. Dig., Baltimore, MD, Jun. 1998, pp. 47–50. • [3] J. Lin, C. Zelley, O. Boric-Lubecke, P. Gould, and R. Yan, “A silicon MMIC active balun/buffer amplifier with high linearity and low residual phase noise,” in IEEE MTT-S Int. Dig., Boston, MA, Jun. 2000, vol. 3, pp. 1289–1292. • [4] H. Komurasaki, H. Sato, N. Sasaki, and T. Miki, “A 2-V 1.9-GHz Si down-conversion mixer with an LC phase shifter,” IEEE J. Solid-State Circuits, vol. 33, no. 5, pp. 812–815, May 1998. • [5] B. Razavi, Design of Analog CMOS Integrated Circuits. New York: McGraw-Hill, 2001. • [6] Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices. Cambridge, U.K.: Cambridge Univ. Press, 1998.

  12. Thank You For Your Attention

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