Proof Mass

1. Nitride layer d Al end cap High Piezoelectric Coefficient Ferroelectric Films for MEMS ApplicationsSusan Trolier-McKinstry and Srinivas TadigadapaPennsylvania State University, DMR0102808 During the course of this program, we developed methods of integrating high strain piezoelectric films into microelectromechanical systems. We designed and fabricated high sensitivity accelerometers for real-time monitoring of rotating industrial equipment. We also miniaturized a flextensional mechanical amplifier, demonstrating that it enables at least a 1.5 times enhancement of the available strain. The resulting structures are candidates for low power switches in cell phones, in adaptive optics, and in many other applications where large vertical motion is required in laterally small devices. Interdigitated Electrodes Proof Mass

2. High Piezoelectric Coefficient Ferroelectric Films for MEMS ApplicationsSusan Trolier-McKinstry and Srinivas TadigadapaPennsylvania State University, DMR0102808 • Education: • Han Guen Yu completed his M.S. and is finalizing his Ph.D. research. • 2 revised courses expose graduate students to MEMS and the underlying crystal chemistry that aids in designing active components • One female undergraduate gained two years experience in piezoelectric films, presenting her work at several international conferences. Teaching Assistant with Students using Interference Microscope Outreach: The PI’s supervised research projects under the NSF funded Research Experience for Undergraduates (REU) students program. Optical Picture of the MEMS Test Chip Fabricated by the EE 597A Students