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Beyond PFOS- Preorganized Lithographic Materials at Intel’s Molecules for Advanced Patterning Program. Dr. Robert P. Meagley Intel’s Researcher in Residence Lawrence Berkeley National Laboratory. MAPP. http://www.intel.com/technology/techresearch/people/bios/meagley_r.htm. Outline.
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Beyond PFOS- Preorganized Lithographic Materials at Intel’s Molecules for Advanced Patterning Program Dr. Robert P. Meagley Intel’s Researcher in Residence Lawrence Berkeley National Laboratory MAPP http://www.intel.com/technology/techresearch/people/bios/meagley_r.htm
Outline • Why MAPP? • Why deploy at the Molecular Foundry? • What do we do here? • 1st 18months: Conclusions
Lithography Meagley, Robert P., “Sub 30nm Photoresist Design Considerations: Molecular Nanotechnology”, Future Fab International, 21, 2006
65nm Node Intel Lithography Roadmap • SA Challenges: • Roughness • Resolution • Defects Nearly two billion transistors “Montecito” 193nm litho into 32nm node then EUV DUV Molecular CDs Molecular Defects EWH 35nm EUV
Molecules for Advanced Patterning National Lab Accelerate discovery in nano-lithography Intel University Supplier “Technology Tetrahedron”
Program Structure • Capabilities • Metrology (Foundry, NCEM) • Chemical: LC/MS, MALDI, NMR • Surface: elipsometry, SEM, CFM • Lithography (ALS, Foundry, UCB) • 248nm, e-beam UCB Microlab • EUV MET, Nanowriter • Synthesis (Foundry) • Prototyping in <10g lots • 4 Fume hoods & drybox in two 500 sq. ft. labs • People • Intel Components Research Sr. Staff Scientist • 3 Post-docs one position now open (LBNL) • Contractors, assistants & visitors • Collaborations: NIST, UWI & tech transfer
Photoresist Structures 500nm Intrinsic ordering impacts image Several levels 50 10 nm Empirically engineered for HVM AFM reveals high levels of organization
Benefits of Preorganization H+ Polymer (i) Polymer (s) PAG H+ B- + H+ HB Base Pixel Acid Micelle/Dendrimer Oligomer Film • Catalysis fast within pixel, slow outside • Higher Eact PGs/ Higher pKa acids • Self-assembly disruption adds contrast • Diffusion control beyond PFOS Greener chemistry, enhanced performance
APPAG • Adhesion Promoting Photo Acid Generator • Pre-organizes catalyst boost signal/noise • Siloxane with pendant active species • Ultra thin films and SAMs • Building block for more complex structures • Pre-organize catalyst & switch for kinetic advantage • Base localizes catalyst for pixel discrimination Moiety placement guides proton trajectory
APPAG Chemistry Monomer MALDI- TOF • Tuned diffusion for CD contol • Tuned thickness with Mw control • Surface-seeking PAG • Faster photospeed
1st APPAG Print Test Commercial resist applied over an underlayer The control is a commercial BARC 36 mj/cm2, 0 micron focus 40mj/cm2, 0.8 micron focus Control: square at zero focus but footed out of the focus APPAG: Square profile retained at zero and out of focus
Bossung plots (DUV exposure) 36mJ/cm2 250nm mask Triflate improved DUV depth of focus
Scissionable Quencher Backbone • Quencher integration in the polymer backbone • Pre-organize catalyst & switch for kinetic advantage • Base localizes catalyst for pixel discrimination • Pre-organize catalyst & switch for kinetic advantage • Base localizes catalyst for pixel discrimination Moiety placement guides proton trajectory
SQB 1st Prototype Flexible linker EUV Dose mJ/cm2 Geometric Acceleration: “Spatio-temporal Effect”
Scissionable Steroidal Dendrimer • Scissionable host made with bile acids • Pre-organized catalyst for kinetic advantage • Disrupted preorganization adds solubility • Micelle controls peripheral & interior chemistry • G0 and G1 analogs prepared • First G0 resolves 300nm • Pre-organize catalyst & switch for kinetic advantage • Base localizes catalyst for pixel discrimination Moiety placement guides proton trajectory
Scissionable Steroidal Dendrimer Morphology from Casting Solvent
H O O H H C O C H 3 3 C H 3 H O Swern O O O O TFAA H C O C H 3 H C 3 C H H C 3 O 3 3 C H • MeLi • I H O R= O(O)CCF 3 3 R I O O O H C H C 3 O O 3 C H 3 H C C H H C 3 O O 3 3 C H 3 O C H 3 H C O C H 3 3 C H 3 H O G1 Dendron & Hyperbranching
G1 Dendrimer extended conformation
18th Month Conclusions • MAPP in Molecular Foundry “Jumpstart” • 6 months from empty room to 1st prototype • 4 designs and 18 prototypes in 1st year • Diffusion control through preorganization • APPAG steers proton with interface • SBQ steers proton with base • SDR Steers proton with polarity • Future materials needed • Pattern anticipation • Dimensional decoupling (Z from X-Y, X from Y) Diffusion control to eliminate PFOS
Acknowledgements • Intel: Dr. Mike Mayberry, Melissa Shell, Dr. Michael Leeson, Dr. Heidi Cao, Dr. Adam Schafer, Dr. Wang Yueh, Vani Thirumala • Molecular Foundry: Dr. Eduardo Saiz, Dr. Geeta Sharma, Dr. Shalini Sharma, Ankur Gupta, Kate Goodin, Michael Rattner, Igor Tregub • NCEM: Doreen Ah Tye & DOE* • ALS: Brian Hoef and Paul Denham • UCB Microlab team • UWI: Prof. Paul Nealey, Prof. Padma Gopalan, Dr. Insik In, Young-Hye Na • Thank you for your attention! • # DE-AC02-05CH11231
Low level light exclusion key in 2nd step DOE in synthesis: ES MS of APPAG intermediate • Initial results inconsistent • DOE revealed “cliff” at 120 degrees RT 120 1h 120 2h 140 1h 160 1h 140 1h APPAG6
2006 Publications/Presentations • R. Meagley, S. Sharma, G. Sharma, K. Goodin, M. Rattner, “Smart Interfaces: improving pattern fidelity with the gain enhancing underlayers, APPAG”, J. Macromolecular Sci., 45(6), 2006 (invited paper, in Press) • R. Meagley “Sub 30nm photoresist design” Future fab International, Issue 26, June 2006 (invited paper) http://www.future-fab.com/documents.asp?d_ID=4005 • G. Sharma, S. Sharma, R. Meagley “Preorganization in Photoresist Architecture” 12th Wintertur Symposium on Polymers for Microelectronics May 3, 2006 (invited talk) • J.M. Roberts, R. Meagley, T.H. Fedynyshyn, R.F. Sinta, D.K. Astolfi, R.B. Goodman, and A. Cabral, Proc. SPIE 6153 (2006). • T.H. Fedynyshyn, R.F. Sinta, D.K. Astolfi, A. Cabral, J.M. Roberts, and R. Meagley, Proc. SPIE 6153 (2006).