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Radiation-Tolerant Silicon Strip Sensors for Super-LHC and FAIR Projects

This project aims to develop radiation-tolerant silicon strip sensors for the Super-LHC and FAIR projects. The participants include CERN ESR Nicola Pacifico, with supervisor Michael Moll, GSIESR, and Industrial Partner - Micron Semiconductors Ltd. The project focuses on high-rate and high-occupancy environments, integrated radiation levels, and different timing calls for electronics in creating sensors for the Super-LHC and FAIR projects. Collaboration with RD50, CERN internal projects, ATLAS and CMS groups, and CBM (FAIR) groups is crucial. The work plan includes milestones like setting up test beds at CERN and GSI.

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Radiation-Tolerant Silicon Strip Sensors for Super-LHC and FAIR Projects

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  1. MC-Pad kickoff meeting 13-14.1.2009 Project P1 : Radiation Tolerant Mini-Strip Tracking Detectors OUTLINE • Participants & Project outline • Motivation: Sensors for Super-LHC & FAIR • Framework & Work plan • Some recent RD50 results & TCT measurementsPresentation by Nicola Pacifico – P1 ESR at CERN Michael Moll (CERN-PH-DT) – P1 coordinator

  2. P1 : Project Outline Aim: Development of Radiation Tolerant Silicon Strip Sensors for the Super-LHC and FAIR projects. Participants:CERNESR Nicola Pacifico (since 1.1.2009)Supervisor Michael MollGSIESR .. open position ..Supervisor Johann Heuser - University of Hamburg, Germany - Josef Stefan Institute, Ljubljana, Slovenia - National Institute of Materials Physics, Bucharest, RomaniaIndustrial Partner: - Micron -Micron Semiconductors Ltd. (UK) • Silicon strip sensors • High rate & high occupancy environment • High integrated radiation levels over lifetime • Single sided vs. Double sided sensors • Different timing calls for different electronics Challenge in combining the work of the 2 ESRs: “Super-LHC” and “FAIR” sensors have common and quite different requirements Detailed project description [MC-PAD: Part B – Stage 2 (page 8 and pages 35-37)] MC-PAD Kick-Off – 12-13 Jan 2009 -2-

  3. P1 : Motivation – Radiation Tolerant S-LHC Sensors Pixel sensors: max. cumulated fluence for LHC Strip sensors: max. cumulated fluence for LHC MC-PAD Kick-Off – 12-13 Jan 2009 -3-

  4. P1 : Motivation – Radiation Tolerant S-LHC Sensors Pixel sensors: max. cumulated fluence for LHC andS-LHC SLHC will need more radiation tolerant tracking detector concepts!Some new concepts and silicon materials have been recently proposed:MC-PAD P1 will be part of the ongoing R&D and prototyping on these sensors. Strip sensors: max. cumulated fluence for LHC andS-LHC MC-PAD Kick-Off – 12-13 Jan 2009 -4-

  5. P1 : Motivation – Silicon Sensors for the FAIR project • Silicon Tracking System (STS) for the CBM Experiment • Tracking nuclear collisions • Au+Au interactions, 25 GeV/u at 10 MHz interaction rate • up to 1000 charged particles/event ; track densities up to 30 cm-2/event • Double sided, double metal strip sensors as baseline solution • Radiation levels up to ~1015cm-2 (6 years operation) MC-PAD Kick-Off – 12-13 Jan 2009 -5-

  6. P1 : Radiation Tolerant Mini-Strip Tracking Detectors [More details: MC-PAD: Part B – Stage 2 (pages 35-37)] MC-PAD Kick-Off – 12-13 Jan 2009 -6-

  7. P1 : Framework and Collaborations Project has to be performed in close collaboration with international R&D efforts for SLHC and FAIR sensor developments. • RD50 collaboration • CERN internal project “WP4 of Council Whitepaper – Theme 3 R&D” • Project to support SLHC - sensor development activities of CERN Staff on ATLAS/CMS/RD50 (coordinator: M.Moll) • ATLAS and CMS groups working on the silicon tracker upgrades • CBM (FAIR) groups working on sensor developments and prototype STS system P1 will be performed in close collaboration with: … and naturally with related MC-PAD projects: • P2: Hybrid Pixel Detectors • P3: Radiation Hard Crystals & 3D Detectors • Projects on electronics: P9, P10, P11 MC-PAD Kick-Off – 12-13 Jan 2009 -7-

  8. P1 : Workplan/Milestones (see proposal page 37) M1/D1:Test set-ups at CERN & GSI ready … need ESR at GSI to start common activities! MC-PAD Kick-Off – 12-13 Jan 2009 -8-

  9. P1 : Radiation Tolerant Mini-Strip Tracking Detectors Presentation by ESR : Nicola PacificoRecent example of successful silicon material engineering MC-PAD Kick-Off – 12-13 Jan 2009 -9-

  10. TCT – Transient Current Technique A tool for observing the field profile I(t)=q E(v(t)) v(t)drift MC-PAD Kick-Off – 12-13 Jan 2009 -10-

  11. MCz: Neutron and 24 GeV/c proton irradiation • MCz-Si (Magnetic Czochralski Silicon) is a promising new material that shows improved Charge Collection Efficiency (CCE) after high radiation levels • Space Charge evolves differently after proton and neutron irradiation • My diploma thesis work suggested a possible difference in CCE after irradiation with different kind of particles MCz-n after 8.8x1014 neutrons/cm2 MCz-n after 14x1014 protons/cm2 introduction of negative space charge vs. introduction of positive space charge (Non Ionizing Energy Loss SCALING: 14x1014 p/cm2 equivalent to 8.8x1014 n/cm2) MC-PAD Kick-Off – 12-13 Jan 2009 -11-

  12. “Mixed Irradiations” n-type MCZ Mixed irradiations performed with: (a) 5x1014 neutrons (1 MeV equivalent fluence) [T.Affolder et al. 13th RD50 Workshop, Nov.2008] 500V MC-PAD Kick-Off – 12-13 Jan 2009 -12- MC-PAD Kick-Off – 12-13 Jan 2009 -12-

  13. “Mixed Irradiations” n-type MCZ Mixed irradiations performed with: (a) 5x1014 neutrons (1 MeV equivalent fluence) (b) 5x1014 protons (1 MeV equivalent fluence) [T.Affolder et al. 13th RD50 Workshop, Nov.2008] • FZ (n-in-n)Mixed Irradiation: Damage additive! 500V MC-PAD Kick-Off – 12-13 Jan 2009 -13- MC-PAD Kick-Off – 12-13 Jan 2009 -13-

  14. “Mixed Irradiations” n-type MCZ Mixed irradiations performed with: (a) 5x1014 neutrons (1 MeV equivalent fluence) (b) 5x1014 protons (1 MeV equivalent fluence) [T.Affolder et al. 13th RD50 Workshop, Nov.2008] • FZ (n-in-n)Mixed Irradiation: Damage additive! • MCZ (n-in-n)Mixed Irradiation:Proton damage “compensates” part of neutron damage (Neff) More charge collected at 500V after additional irradiation!!! 500V MC-PAD Kick-Off – 12-13 Jan 2009 -14- MC-PAD Kick-Off – 12-13 Jan 2009 -14-

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