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一种 0.1-1.2GHz CMOS 超宽带单端结构功放设计

天津大学电子信息工程学院 School of Electronic Information Engineering. 一种 0.1-1.2GHz CMOS 超宽带单端结构功放设计. 王立果. CMOS PA Design. 一、宽带功率放大器（ PA ）的研究现状 二、目前宽带功放的几种实现方法 三、拟采取的设计方案 四、完成课题的条件 五、进展计划. www.tju.edu.cn/seie/. School of Electronic Information Engineering. CMOS PA Design. 一、国内外研究现状.

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一种 0.1-1.2GHz CMOS 超宽带单端结构功放设计

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  1. 天津大学电子信息工程学院 School of Electronic Information Engineering 一种0.1-1.2GHz CMOS 超宽带单端结构功放设计 王立果

  2. CMOS PA Design 一、宽带功率放大器（PA）的研究现状 二、目前宽带功放的几种实现方法 三、拟采取的设计方案 四、完成课题的条件 五、进展计划 www.tju.edu.cn/seie/ School of Electronic Information Engineering Company Logo

  3. CMOS PA Design 一、国内外研究现状 • CMOS工艺相对较少，且同时满足各项指标（线性度、PAE、带宽）的芯片很难。 www.tju.edu.cn/seie/ School of Electronic Information Engineering Company Logo

  4. CMOS PA Design 一、国内外研究现状 [1] Y.-J. E. Chen, L.-Y. Yan, and W.-C. Yeh, “An integrated wideband power amplifier for cognitive radio,” IEEE Trans. Microw. Theory Tech ., vol. 55, no. 10, pp. 2053–2058, Oct. 2007. [2] A. Vasylyev, P. Weger, and W. Simburger, “Ultra-broadband 20.5–31GHz monolithically-integrated CMOS power amplifier,” Electron.Lett. , vol. 41, no. 23, pp. 1281–1282, Nov. 2005. [3] M.-C. Chuang, P.-S. Wu, M.-F. Lei, H. Wang, Y.-C. Wang, and C.S. Wu, “A miniature 15–50-GHz medium power amplifier,” in IEEE Radio Frequency Integrated Circuits Symp. Dig., Jun. 11–13, 2006. [4] C.-Y. Chiu and M. Ismail, “A fully integrated multi-standard power amplifier in 0.18um CMOS for IEEE 802.11a/b/g WLANs,” in IEEE Midwest Symp. on Circuits and Systems Dig., Aug. 7–10, 2005, vol.22, pp. 1111–1114. [5] J.-W. Lee, L. F. Eastman, and K. J. Webb, “A gallium-nitride push-pull microwave power amplifier,” IEEE Trans. Microw. Theory Tech., vol.51, no. 11, pp. 2243–2249, Nov. 2003. [6] M.-F. Lei, Z.-M. Tsai, K.-Y. Lin, and H. Wang, “Design and analysis of stacked power amplifier in series-input and series-output con-figuration,” IEEE Tran. Microw. Theory Tech., vol. 55, no. 12, pp.2802–2812, Dec. 2007. [7] C. Lu, A.-V. Pham, M. Shaw, and C. Saint, “Linearization of CMOS broadband power amplifiers through combined multigated transistors and capacitance compensation,” IEEE Tran. Microw. Theory Tech., vol.55, no. 11, pp. 2320–2328, Nov. 2007. [8] B. Sewiolo and R. Weigel, “A novel 2–12 GHz 14 dBm high efficiency power distributed amplifier for ultra wideband applications using a low cost SiGe BiCMOS technology,” in IEEE Int. Microw. Symp. Dig. , Jun.15–20, 2008, pp. 1123–1126. [9] T. S. Wooten and L. E. Larson, “A decade bandwidth, low voltage,medium power class B push-pull Si/SiGe HBT power amplifier em-ploying through-wafer vias,” in IEEE Radio Frequency Integrated Cir-cuits Symp. , Jun. 17, 2008, pp. 519–522. School of Electronic Information Engineering Company Logo www.tju.edu.cn/seie/

  5. CMOS PA Design 一、国内外研究现状 CMOS工艺PA现存主要问题： • CMOS工艺尺寸减小,击穿电压下降 • 工作频率升高,高频增益下降 • 电源电压降低,附加功率效率(PAE)降低 • 同时实现输出功率、线性度、PAE等指标的改善难度加大 www.tju.edu.cn/seie/ School of Electronic Information Engineering Company Logo

  6. CMOS PA Design 一、国内外研究现状 • 目前很多商用PA仍使用GaAs、GaN等器件，但造价高, 体积大。 • 尽管CMOS工艺中存在一些挑战，片上系统迫切要求PA能和其它射频前端组件用主流的CMOS工艺集成在同一芯片上,以减小体积、降低造价、增加系统可靠性。 Why CMOS？ www.tju.edu.cn/seie/ School of Electronic Information Engineering Company Logo

  7. CMOS PA Design 二、目前宽带功放的几种实现方法 • 宽带的定义：从频域来看，宽带是指相对带宽(信号带宽与中心频率之比) 在1% 到25% 之间，相对带宽大于25%的被称为超宽带。 • 在宽带CMOS射频功率放大器设计中，采用的结构也是多种多样的： • 单端结构 • 差分结构 • 分布式结构 • 输出变压器式匹配结构 • 特殊堆叠结构 www.tju.edu.cn/seie/ School of Electronic Information Engineering Company Logo

  8. CMOS PA Design 二、目前宽带功放的几种实现方法 1.单端结构 • 结构简单 • 面积小 • 增益平坦度较差 www.tju.edu.cn/seie/ School of Electronic Information Engineering Company Logo

  9. CMOS PA Design 二、目前宽带功放的几种实现方法 2. 差分结构 • 较大的电压输出摆幅 • 可降低功放对封装寄生效应灵敏度 • 降低功放对其他电路的干扰 • 需要功率合成器，很难集成 www.tju.edu.cn/seie/ School of Electronic Information Engineering Company Logo

  10. CMOS PA Design 二、目前宽带功放的几种实现方法 3.分布式结构： • 宽频带下很好的匹配和线性度 • 缺点是较大的功耗和面积 • PAE较低 www.tju.edu.cn/seie/ School of Electronic Information Engineering Company Logo

  11. CMOS PA Design 二、目前宽带功放的几种实现方法 4.输出变压器式匹配结构： • 输出阻抗从50欧姆变为更小的优化负载 • 带宽大，可用于UWB（超宽带）PA设计 • 缺点则是面积较大 www.tju.edu.cn/seie/ School of Electronic Information Engineering Company Logo

  12. CMOS PA Design 二、目前宽带功放的几种实现方法 5.堆叠式结构： • 良好的增益平坦度和带宽 • GaAs 工艺 • 面积较大 • 基于CMOS工艺有待于验证 www.tju.edu.cn/seie/ School of Electronic Information Engineering Company Logo

  13. CMOS PA Design 三、拟采取的设计方案 本次课题主要旨在采用CMOS工艺，提高射频功率放大器的带宽及其增益平坦度等性能，并减小芯片的面积。最终，设计出一款跨倍频程的50MHz ~1.5GHz的CMOS 宽带射频功率放大器。 www.tju.edu.cn/seie/ School of Electronic Information Engineering Company Logo

  14. CMOS PA Design 四、完成课题的条件 • 对CMOS 射频功率放大器的理论有一定了解 • 能够熟练运用Cadence：基本掌握电路设计及优化、版图的设计及DRC、LVS验证，并且进行后仿的整个流程 • 课题组已经拥有成熟的仿真服务器工作站设施和测试设备，已有一定的设计和测试经验，具备完成课题的条件 www.tju.edu.cn/seie/ School of Electronic Information Engineering Company Logo

  15. CMOS PA Design 五、进展计划 www.tju.edu.cn/seie/ School of Electronic Information Engineering Company Logo

  16. 天津大学电子信息工程学院 School of Electronic Information Engineering Thank you www.tju.edu.cn/seie/ www.tju.edu.cn/seie/ School of Electronic Information Engineering

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