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Si substrate

Diffusion in Isotopically Controlled Silicon-Germanium Alloys Eugene E. Haller, University of California, Berkeley, DMR-0405472. Cap layer.

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Si substrate

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  1. Diffusion in Isotopically Controlled Silicon-Germanium AlloysEugene E. Haller, University of California, Berkeley, DMR-0405472 Cap layer Research Goal: To determine the diffusion properties of Silicon-Germanium alloys using enriched stable isotopes. SiGe alloys exhibit superior electronic transport properties, e.g., higher mobility. Controlling the diffusion of atoms in advanced semiconductor material systems at the nano-scale is necessary for the development of future high-speed electronic devices. 100 nm natural Si layer Si substrate Q = 3.32 eV Above: Plot of the diffusion coefficient of the isotope 28Si in Ge vs. inverse temperature yielding the activation energy for diffusion, Q, in comparison to previous work shown. Left: Secondary Ion Mass Spectrometry (SIMS) depth profile of the as-grown Si in Ge (dashed line) and after heating at 550 °C for 30 days (open circles). Solid line is the computer model fit to the data. (work submitted to Journal of Applied Physics)

  2. Diffusion in Isotopically Controlled Silicon-Germanium AlloysEugene E. Haller, University of California, Berkeley, DMR-0405472 Education:Two graduate students, Hughes Silvestri and Chris Liao, contributed to the diffusion research supported by this NSF grant. Hughes Silvestri received his Ph.D. from UC-Berkeley and is continuing this research as a post-doc. Broader impact:Fundamental research with new semiconductor materials systems (in our case SiGe alloys) will enable the incorporation of the new materials into modern electronic devices which will lead to faster devices and improved device performance. The physics of dopant diffusion at the nanometer scale plays a crucial role in understanding the doping process. Our research group is an active member of a university-semiconductor industry collaboration on Small Feature Reproducibility and Feature Level Compensation and Control. The goal of the collaboration is the development of enhanced control of semiconductor processing for future electronic devices. A diagram of the structure grown for measuring the simultaneous diffusion of Si and Ge in Si1-xGex alloys. The alternating natural and isotopically enriched MBE-grown layers allow for the observation of Si and Ge diffusion from the natural layers into the enriched layer.

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