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g4beamline study of Si PIN diode Bill Ashmanskas 2008-03-06

g4beamline study of Si PIN diode Bill Ashmanskas 2008-03-06. I didn't start until I got Camille's reminder email yesterday ... Nevertheless, I got something useful out of the simulation! So g4beamline is a pretty handy tool.

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g4beamline study of Si PIN diode Bill Ashmanskas 2008-03-06

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  1. g4beamline study of Si PIN diodeBill Ashmanskas2008-03-06 • I didn't start until I got Camille's reminder email yesterday ... • Nevertheless, I got something useful out of the simulation! • So g4beamline is a pretty handy tool

  2. Mean DE is 4 keV out of 660 keV. But in fact only 1% interact at all, and the ones that do interact seem to lose most of their energy. (Note that I measured energy lost by photon, not necessarily energy gained by silicon.) Not sure why a handful of E > 660 keV. preview of punchline ... stop here if you're bored

  3. just google “g4beamline”

  4. simple ASCII description of problem to be simulated

  5. run the program ...

  6. check that geometry is not crazy (1000 evts shown here)

  7. Ran 100K tracks in 2 minutes on a 6 year old PC (1.8 GHz P4)

  8. I chose ASCII output; you could choose ntuple, root, etc. note that this is the output of a test run (1000 tracks), not the final run

  9. match upstream & downstream particles; output consolidated data (e.g. DE in keV)

  10. Mean DE is 4 keV out of 660 keV. But in fact only 1% interact at all, and the ones that do interact seem to lose most of their energy. (Note that I measured energy lost by photon, not necessarily energy gained by silicon.) Not sure why a handful of E > 660 keV.

  11. 660 keV photons from Cs137 source • S1223-01 Hamamatsu silicon PIN diode • From datasheet: • Window  5.9mm, 1.3mm thick, borosilicate glass • Effective active area 3.6mm x 3.6mm • Egap  1.12eV at 25°C • From elsewhere • 316.5m intrinsic region thickness

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