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IF-1 high (4-8 GHz) design and DM results

IF-1 high (4-8 GHz) design and DM results. Carmen Diez, Isaac López-Fernández, Juan Daniel Gallego, Alberto Barcia, Pere Planesas Centro Astronómico de Yebes Observatorio Astronómico Nacional Apartado 148, 19080 Guadalajara, SPAIN. Contents. IF 1 (4-8 GHz) Specification

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IF-1 high (4-8 GHz) design and DM results

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  1. IF-1 high (4-8 GHz) design and DM results Carmen Diez, Isaac López-Fernández, Juan Daniel Gallego, Alberto Barcia, Pere Planesas Centro Astronómico de Yebes Observatorio Astronómico Nacional Apartado 148, 19080 Guadalajara, SPAIN Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  2. Contents • IF 1 (4-8 GHz) Specification • IF 1 (4-8 GHz) Design and DM results • Design choices • Results from DMs • Experience with IF 1 (4-8 GHz) DMs • Operational experience • Overview of IF 1 problems and failures • Discussion Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  3. SPECIFICATION (introduction) Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  4. SPECIFICATION (performance) • Frequency Band: 4-8 GHz • Noise Temperature: 10 K (baseline), 5 K (goal) • Gain: >22 dB • Gain ripple: ±2dB (baseline), ±1.5dB (goal) • Input Return Loss: < 0dB (no isolator) • Output Return Loss: <-10 dB (baseline), <-15 dB (goal) • Stability: K>1 (all frequencies) • Maximum Power Dissipation: 5 mW • Bias Range: 0<Vd<1V, 0<Id<5mA,–11.0V<Vg<5.9V • Normalized Gain Fluctuation @ 1 Hz:3×10-4 (Hz)-1/2 (baseline), 1.4×10-4 (Hz)-1/2 (goal) Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  5. SPECIFICATION (interfaces) • Envelope: 7845.3 15 mm • Mounting holes: 3 Helicoil M2.5 • Interface surface: gold plated, 10 m flatness • RF connectors: SMA (4 screw for O-ribbon) • DC connectors: MDM (9 pin P type, no gasket) • DC pin allocation: includes Ground sense • DC pin allocation: pins not used are grounded Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  6. SPECIFICATION (interfaces) • Bias circuit • Gate voltage divider • ESD protection • EMC rejection Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  7. SPECIFICATION (environmental) • EMI/ESD: provision of an additional cavity (not used) • EMI tests performed on DMs • ESD tests done in HEMTs • Radiation: tests done at KOSMA on InP HEMTs • Thermal Cycles: 50, RT to Cryogenic • Bake-out: 5, RT to 90 C • Vibration • Qualification at 90 K • Acceptance at RT, reduced level • Vent holes Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  8. DESIGN (history 1) • Goal 1: 4 GHz Bandwith • Center frequency 10 GHz: • Less fractional BW • Isolators available • Bad for HEB • Center frequency 6 GHz: • More fractional BW • Isolators needed development • Possible for HEB • Goal 2: Low Power Dissipation • GaAs: Commercial, well established, initially considered • InP: Experimental, qualification needed, lower noise and power Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  9. DESIGN (history 2) YXF 8-12 GHz YCF 2000 (Mixer Groups) YCF 5000 YCF 6000 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  10. DESIGN (history 3) • 37 4-8 GHz YCF amplifiers fabricated at CAY in different series • All processed performed in our labs • Design transferred to Alcatel Espacio to build Flight Models • Series analyzed here: • YCF 2 – ETH transistors (Mixer Program Amplifiers) • YCF 6 – TRW transistors (Development Models) Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  11. MICROTECH DC connector 1 2 3 Output matching circuit SMA connector Input matching circuit Interstage matching circuits Design Description (1) Transistor area detail.See source inductive feedbackand drain resistive loading ETH transistorwith bonding wires Bias cavity with biasing circuits Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  12. Design Description (2) • Microstrip hybrid design simulated by MMICAD software • Developed cryogenic models for transistors, connectors, critical capacitors, resistors and bonding wires • Each InP device is independently stabilized by resistive loading and inductive feedback • Input matching circuit for optimum noise • Tuning elements incorporated in the design (adjustable bonding wires, microstrip islands) • Box resonances avoided with careful EM design and the use of microwave absorbers • Multiple bias networks requirements must filter RF, • Contribute to the unconditional stability of the amplifier • Comply with EMC mission requirements • Provide ESD protection of sensitive InP HEMTs • Have a low drain voltage drop Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  13. Design Description: Reliability • Reliability is a priority over performance for the selection of components, substrates and mounting techniques • Spatial design • Cryogenic operation • Past experience in cryogenic designs obviates most of the work in testing, modeling and pre-qualifying components • An example: ‘O’ ribbon connection in the SMA tab contact: • Allows mobility in three axis • Excellent electrical properties compared with traditional SMA connections Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  14. DESIGN: Cryo Capacitors Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  15. DESIGN: Measurement of cryogenic S parameters Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  16. DESIGN: Measured S parameters of a InP HEMT Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  17. DESIGN: Experience with HEMTs (2) • Wide experience with HEMT devices • More than 30 batches of commercial GaAs transistors tested • Several models of InP transistors measured • JPL-TRW (CHOP program): 15 batches, 9 models • ETH Zurich: 8 batches, 4 models • Chalmers University: 1 batch • HRL: 1 Batch Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  18. TRW T-42 CRYO3 • 200×0.1 μm gate • Best performance TRW T-45 CRYO4 • 200×0.1 μm gate • Used in DMs • Space qualifiable, to be used in FMs • CHOP developed ETH T-35 • 200×0.2 μm gate • Experimental transistor • Design by request • Used in DMs DESIGN: InP HEMTs 0.19 mm 0.22 mm Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  19. DESIGN: Closed Cycle Cryostat Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  20. Performance: Noise and GainMeasurement procedures • Measurement procedure:cold attenuator • Two measurement systems available at our labs: • System 350: • Older • More pessimistic • Used to keep traceability with past measurements • All noise tests shown here were performed with 350. • System 1020: • Newer calibration. • Gives 0.75 K better results • Estimated error (both) 1.4 K(repetitivity < 0.2 K) Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  21. MP amplifier YCF 2 • 2 stages ETH 200 µm • Gold plated brass • 61.4×35×11.5 mm, 149 g • Duroid 6002 substrates • DM amplifier YCF 6 • 2 stages TRW 200 µm • Gold plated aluminum • 58×32×15 mm, 65 g • Duroid 6002 substrates • Improved bias circuits • Additional cavity for filtering Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  22. Performance: Noise and GainResults Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  23. Performance: Reflection and Stability • Worst case output reflection • Average DMs: -14.3 dB • Average MPAs: -13.0 dB • Model prediction of output return losses needs refinement • Isolator at the input (not designed for low input ref.) • Unconditionally stability for most bias points checked with sliding shorts Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  24. Performance: Gain fluctuationsCorrelation with voltage fluctuations • Fluctuations of gate voltage measured with HP35670A • Moderate correlation with gain fluctuations for different amplifiers measured at the same bias point • This simple DC measurements may be useful for pre-selecting least fluctuating devices from a batch 1 Hz 1 Hz Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  25. Performance: Gain fluctuationsBias dependence • Tested the variation of gain and voltage fluctuations with drain voltage • Found a steep change in gain voltage around 0.5 V • The behavior of gain and voltage fluctuations is similar as Vd varies • High fluctuation zones could be avoided with no penalty in noise or gain • Voltage fluctuations may help detecting these bias regions Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  26. DM Program (Yebes) HIFI YCF 6000 (Results) Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  27. Performance: IsolatorsImpact in overall performance • Isolators measured @ 14 K (PAMTECH gives data @ 77 K) • Good agreement between measurement (one case) and estimation of isolator noise: • Mean contribution 1.1 – 1.4 K Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  28. Performance: IsolatorsResults Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  29. DM Program (Yebes) HIFI YCF 6004 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  30. QM & FM PROGRAMS (ALCATEL) ALCATEL AEO 1 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  31. QM & FM PROGRAMS (ALCATEL) ALCATEL AEO 1 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  32. Conclusions • 34 Cryogenic InP HEMT 4-8 GHz cryogenic amplifiers fabricated for HERSCHEL, including the Development Models with TRW transistors • Cryogenic S parameters of InP transistors measured in microstrip and noise models developed • Cryogenic isolators used at the input allow wide-band mixer-independent design with small penalty in noise • Exceptional performance and repeatability for the final DMs:3.5 K noise and 27±1.1 dB gain dissipating 4 mW • Gain fluctuations exhibit a greater dispersion • Low frequency noise of gate bias may help selecting more stable devices • Acute sensitivity of gain fluctuations to bias point • Gate bias noise measurements could detect bias regions of high fluctuations Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  33. Experience with IF 1 DMs: FAILURES • Amplifiers YCF 6 (12 amps, 1 fail.) • Development models (5) • No failures • YCF 6006 presents anomalous gain fluctuations at room temperature • Mixer Groups (4) • YCF 6007 failure: Id1=0 @15 K was reported by SRON. This behavior could not be repeated in our labs even after 10 cooling cycles. • YCF 6012 failure: Id2=7 mA (uncontrolled) was reported by KOSMA. The transistor (IREL1) is broken. • Rest (3) • No failures Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  34. Experience with IF 1 DMs: FAILURES • Amplifiers YCF 2 (20 amps, 1 fail.) • Mixer Groups (8) • YCF 2006 failure: anomalous gate voltages and very high noise temperatures reported. In our labs we only detected certain hysteresis in the behavior of the 2nd stage transistor (ETH) • YCF 2009 failure: high noise temperature reported. The amplifier was measured in our labs showing no anomalies. No action was taken • Rest (12) • No failures Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

  35. Conclusions • Failures: 2 in 32 amplifiers • ETH InP HEMT dead (ESD?) • TRW InP HEMT dead (ESD?) • No failures in other components, materials, and processes Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

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