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Fundamentals of VLSI and Fabrication Technology

Fundamentals of VLSI and Fabrication Technology. 1. EE 4121 : VLSI Design and Technology. Instructor Abu Syed Md. Jannatul Islam Lecturer, Dept. of EEE, KUET, BD. Department of Electrical and Electronic Engineering Khulna University of Engineering & Technology Khulna-9203.

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Fundamentals of VLSI and Fabrication Technology

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  1. Fundamentals of VLSI and Fabrication Technology 1 EE 4121 : VLSI Design and Technology • Instructor • Abu Syed Md. JannatulIslam • Lecturer, Dept. of EEE, KUET, BD • Department of Electrical and Electronic Engineering • Khulna University of Engineering & Technology • Khulna-9203

  2. A Brief History 2

  3. Scale of Integration 3 • Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining hundreds of thousands of transistors or devices into a single chip. Dual Core+ Core I7 (2015): 1.9billion and 22nm • This scale of growth has resulted from a continuous scaling of transistors and other improvements in the Silicon manufacturing process.

  4. Integration & Moore’s Law 4 • 1965: Gordon Moore(Intel cofounder) plotted transistor on each chip • Moore's law: The number of transistors in a dense integrated circuit will be doubled about every two years.  Integration Levels SSI: 10 gates MSI: 1000 gates LSI: 10,000 gates VLSI: > 10k gates

  5. Place for Integration 5 • Clean Room: a low level of environmental pollutants  • Company: Apple, IBM, AMD etc.

  6. Why Technology Scaling ? 6 • The demand for battery-operated portable gadgets have increased day by day with tons of applications including hearing aids, cellular phone, laptops etc. • The “basic requirements” of such an application are less area, lower power consumption and cheaper development. • For such portable devices, power dissipation is important because the power provided by the battery is rather limited. Unfortunately, battery technologies cannot be expected to improve the battery storage capacity by more than 30% every five years. This is not sufficient to handle the increasing power needed in portable devices.

  7. Scaling and Technology Node 7 • By making transistors smaller, more circuits can be fabricated on the silicon wafer and therefore, the circuit becomes cheaper. The reduction in channel length enables faster switching operations since less time is needed for the current to flow from drain to source. • In other words, a smaller transistor leads to smaller capacitance. This causes a reduction in transistor delay. As dynamic power is proportional to capacitance, the power consumption also reduces. This reduction of transistor size is called scaling. • Each time a transistor is scaled, we say a new technology node has been introduced. The minimum channel length of transistor is called the technology node. For example, 0.18 micrometer, 0.13 micrometer, 90 nanometer etc. • The scaling improves cost, performance and power consumption with every new generation of technology.

  8. Why MOS not BJT in Integration ? 8

  9. NMOS & CMOS 9 NMOS CMOS

  10. Scaling with CMOS 10

  11. Overview of Processing Technologies 11 • Although a number of processing technologies are available, the majority of the production is done with traditional CMOS. • Other processes are limited to areas where CMOS is not very suitable (like high speed RF applications)

  12. VLSI Design Cycle 12 • The VLSI Design cycle starts with a formal specification of a VLSI chip follows a series of steps, and eventually produces a packaged chip

  13. IC Fabrication 13 • The fabrication steps are sequenced to form three dimensional regions that act as transistors and interconnects that form the network

  14. Chip Fabrication Processes 14

  15. Chip Fabrication Processes 15 • „Silicon Wafer Manufacturing„(CZ, FZ, Bridgeman..) • Wafer Processing • Deposition/Epitaxial Growth (MBE, MOCVD…) • Oxidation • Patterning/Lithography • Removal/Etching • Diffusion and ion implantation • Annealing/Activation of the implanted dopants. … • Metallization„(Sputtering..) • Testing, Assembly and Packaging

  16. Crystal and Wafer Fabrication 19

  17. Crystal and wafer 20 A polished wafer

  18. Wafer Processing 21 • In semiconductor device fabrication, the various processing steps fall into four general categories: • Deposition, • Removal, • Patterning, and • Modification of electrical properties. • Deposition is any process that grows, coats, or otherwise transfers a material onto the wafer. Available technologies include physical vapor deposition (PVD), chemical vapor deposition (CVD), electrochemical deposition (ECD), molecular beam epitaxy (MBE) and more recently, atomic layer deposition (ALD) among others • Removal is any process that removes material from the wafer; examples include etch processes (either wet or dry) and chemical-mechanical planarization (CMP).

  19. Wafer Processing 22 • Patterning is the shaping or altering of deposited materials, and is generally referred to as lithography. For example, in conventional lithography, the wafer is coated with a chemical called a photoresist; then, a machine called a stepper focuses, aligns, and moves a mask, exposing select portions of the wafer below to short wavelength light; the exposed regions are washed away by a developer solution. After etching or other processing, the remaining photoresist is removed by plasma ashing. • Modification of electrical properties has historically entailed doping transistor  sources and drains (originally by diffusion furnaces and later by ion implantation). These doping processes are followed by furnace annealing or, in advanced devices, by rapid thermal annealing (RTA); annealing serves to activate the implanted dopants. Modification is frequently achieved by oxidation, which can be carried out to create semiconductor-insulator junctions.

  20. Syllabus 23 Fabrication and Processing Technology: Crystal growth, wafer preparation, photolithography, oxidation, diffusion, ion implantation, epitaxi, metallization, etching, NMOS and CMOS fabrication technology. Testing and packaging: Overview of silicon semiconductor technology, power dissipation, packaging, silicon on insulator. Introduction to GaAs technology: Ultra-fast VLSI circuits and systems.

  21. Tests and References 24 • Two Class test. • One/Two Spot test. • At least 15-18 Lecture • Copies of chapters will be provided when appropriate • Recommended book: • VLSI Technology by S. M. SZE (Available in Market) • Silicon VLSI Technology by Plummer • Other references: Will be provided in due time.

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