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Product Family Presentation: NVRAM Product Overview

Product Family Presentation: NVRAM Product Overview. Cypress Provides the Industry’s Fastest and Most Energy-Efficient Nonvolatile RAM Solutions. NVRAM Product Overview Product Family Presentation. Cover. NVRAM 1 : Rapid Growth, Broad Markets.

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Product Family Presentation: NVRAM Product Overview

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  1. Product Family Presentation:NVRAM ProductOverview Cypress Provides the Industry’s Fastest andMost Energy-Efficient Nonvolatile RAM Solutions NVRAM Product Overview Product Family Presentation Cover

  2. NVRAM1: Rapid Growth, Broad Markets • The global TAM2 forecast for Nonvolatile RAM (NVRAM) is $590M in 20143 with a 10% CAGR from 2014 through 2018 • Cypress F-RAM™ and nvSRAM products serve many high-growth NVRAM applications, including: • Smart meters • Automotive electronics • Industrial controls and automation • Multifunction printers • Computing and networking • The mission-critical systems used in these high-growth marketsrequire fast, high-endurance, highly reliable data capture on power loss • Customers prefer simple, energy-efficient system designs • Alternative Nonvolatile Memory4 solutions, such as EEPROM5 or Battery-Backed SRAM4, cannot meet these requirements • Mission-critical systems require NVRAMs with best-in-class write speed, endurance, reliability and energy efficiency 1 Nonvolatile Random Access Memory 2 Total available market 3 Web-Feet Research 4 Memory that retains its information on power loss 5 A common NVM that uses floating-gate technology to store data 6 SRAM connected to a battery to store data on power loss NVRAM Product Overview Product Family Presentation Market Vision

  3. Cypress Is the NVRAM Market Leader • Cypress offers the largest portfolio of serial and parallel NVRAM products • F-RAM™, the industry’s most energy-efficient serial and parallel NVRAMs • nvSRAM, the industry’s fastest parallel NVRAMs • Cypress offers the largest portfolio of the industry’s most energy-efficient and reliable F-RAM products • F-RAM consumes 30% of the power of the most advanced EEPROM and offers 100 million times the Write Endurance1 • F-RAM densities range from 4Kb to 4Mb, with supply voltages from 2.0 V to 5.5 V • Serial peripheral interface (SPI) and I2C serial F-RAM products come in SOIC8, DFN8 and EIAJ packages • F-RAM products offer optional real-time clocks and event counters • Cypress offers the largest portfolio of the industry’s fastest parallel nvSRAM products • 25-ns access times are available with unlimited Write Endurance • Densities range from 64Kb to 16Mb with 3.0-V and 5.0-V supply voltages and 1.8-V I/O voltage • Asynchronous SRAM parallel and ONFI 1.0 interfaces come in FBGA, SOIC, SSOP and TSOP packages • Integrated real-time clocks are also available on nvSRAM products • Cypress: • Was the first to produce F-RAM and nvSRAM products • Has shipped more than 1 billion NVRAM units • Provides products that meet the most rigorous automotive and military standards • Assures long-term supply of F-RAM and nvSRAM products • Cypress offers the industry’s fastest, most energy-efficient and highest-reliability NVRAM solutions to capture and protect the world’s most critical data 1 The number of times a nonvolatile memory cell can be rewritten before it wears out NVRAM Product Overview Product Family Presentation Market Positioning

  4. Cypress NVRAM Design Options Choose a Cypress serial F-RAM for: Industry standard SPI or I2C interfaces Low-pin-count, small-footprint packages Low power, instant data capture on power loss High write endurance and long data retention EEPROM replacement Choose a Cypress parallel nvSRAM for: Industry standard asynchronous SRAM parallel and ONFI 1.0-compatible interfaces Access times as fast as 25 ns Instant data capture on power loss Unlimited SRAM write endurance Battery-backed SRAM replacement NVRAM Product Overview Product Family Presentation Branch

  5. Cypress NVRAM Serial F-RAM NVRAM Product Overview Product Family Presentation Divider

  6. Serial Nonvolatile Memory Terms • Nonvolatile Memory (NVM) • Memory that retains its information on power loss • Nonvolatile Random Access Memory (NVRAM) • An NVM that allows direct access to stored data in any random order • Ferroelectric Random Access Memory (F-RAM) • A fast-write, high-endurance, low-energy NVM that uses ferroelectric technology to store data • Electrically Erasable Programmable Read-Only Memory (EEPROM) • A common NVM that uses floating-gate technology to store data • Page Write • A write to a fixed-length contiguous block of memory • Soak Time • The approximate 5 ms required to complete an EEPROM Page Write after the data is presented at the input buffers • Write Endurance • The number of times an NVM cell can be rewritten before it wears out • Wear Leveling • A method to prolong EEPROM Write Endurance that uses an EEPROM with up to 8x excess capacity and a software algorithm to move storage to unused memory addresses before the Write Endurance limit on an active address is reached • AEC-Q100 • A quality standard defined by the Automotive Electronics Council used to verify the reliability of ICs and qualify them for automotive applications NVRAM Product Overview Product Family Presentation ToA

  7. Serial NVM Design Problems • 1. Many electronic devices must reliably store system data in NVM on power loss • EEPROMs require a 5-ms continuation of active power per Page Write for Soak Time • Soak Time requires additional capacitors or batteries for a Page Write on power loss, which adds cost and reduces reliability • Mission-critical data may be subject to radiation and/or magnetic fields • 2. Many data-logging applications exceed the 1 million write-cycle limitation of EEPROM • Wear Leveling is required to improve the Write Endurance of EEPROM over a product lifespan • Wear Leveling requires up to 8x the memory capacity and additional software, which increases cost • 3. Systems using EEPROM have increased system power consumption • For the 5 ms required for EEPROM Soak Time • For the processing required to do Wear Leveling • F-RAM solves these problems • Requires no Soak Time, eliminating the need for additional capacitors or batteries to complete a Page Write on power loss • Provides 100 trillion write cycles, eliminating the need for Wear Leveling • Consumes 2x to 5x less active power than EEPROM, thereby reducing system power • F-RAM cells are inherently gamma-radiation tolerant and are not corrupted by magnetic fields • Cypress F-RAM offers 100 million times the endurance of EEPROM at 30% of the power NVRAM Product Overview Product Family Presentation Design Problems

  8. Serial F-RAM Is a Better Solution Simplify a conventional, complex, EEPROM-based design… By choosing F-RAM as your serial Nonvolatile Memory solution… To produce better solutions for multiple applications at a lower cost, especially for mission-critical applications. 2 x 256Kb for a 64Kb System 8x EEPROM capacity for Wear Leveling Automotive Electronics Industrial Controls Smart Meters Multifunction Printers Medical Devices File System Controller Memory Worn Cell F-RAM pin-to-pin replacement for EEPROM SOIC8 Wear Leveling software algorithm to increase EEPROM Write Endurance Additional capacitor to maintain power for 5 ms per Page Write for Soak Time NVRAM Product Overview Product Family Presentation Solution

  9. Cypress Serial NVRAM vs. Competition’s 1 Comparable write frequency limited by EEPROM’s Soak Time 2 Conditions: Max current, SPI, 10 MHz to 40 MHz, 2.7 to 3.3 V, -40°C to +85° C NVRAM Product Overview Product Family Presentation Competition

  10. F-RAM PortfolioLow Power | High Endurance FM25H20/V20 2Mb; H20: 2.7-3.6 V V20: 2.0-3.6 V 40 MHz SPI; Ind1 CY15B104Q 4Mb; 2.0-3.6 V 40 MHz SPI; Ind1 Q115 FM22L16/LD16 4Mb; 2.7-3.6 V 55 ns; x8; Ind1 FM25V10/VN10 1Mb; 2.0-3.6 V 40 MHz SPI; Ind1, Auto A2 FM24V10/VN10 1Mb; 2.0-3.6 V 3.4 MHz I2C; Ind1 512Kb-8Mb FM28V202A 2Mb; 2.0-3.6 V 60 ns; x16; Ind1 FM28V102A 1Mb; 2.0-3.6 V 60 ns; x16; Ind1 FM25V05 512Kb; 2.0-3.6 V 40 MHz SPI; Ind1, Auto A2 FM24V05 512Kb; 2.0-3.6 V 3.4 MHz I2C; Ind1 FM25V02/W256 256Kb; V02: 2.0-3.6 V W256: 2.7-5.5 V 40 MHz SPI; Ind1, Auto A2 FM24V02/W256 256Kb; V02: 2.0-3.6 V W256: 2.7-5.5 V 3.4 MHz I2C; Ind1, Auto A2 FM33256 256Kb; 3.3V; 16 MHz SPIInd1; RTC4; Power Fail Watchdog; Counter Wireless Memory NDA Required Contact Sales FM28V020 256Kb; 2.0-3.6 V 70 ns; x8; Ind1 FM18W08 256Kb; 2.7-5.5 V 70 ns; x8; Ind1 FM25V01 128Kb; 2.0-3.6 V 40 MHz SPI; Ind1, Auto A2 FM24V01 128Kb; 2.0-3.6 V 3.4 MHz I2C; Ind1, Auto A2 FM31256/31(L)278 256Kb; 3.3, 5.0V; 1 MHzI2C;Ind1;RTC4;Power Fail; Watchdog; Counter FM1808B 256Kb; 5.0 V 70 ns; x8; Ind1 FM16W08 64Kb; 2.7-5.5 V 70 ns; x8; Ind1 FM25640/CL64 64Kb; 3.3, 5.0 V 20 MHz SPI; Ind1, Auto E3 FM24C64/CL64 64Kb; 3.3, 5.0 V 1 MHz I2C; Ind1, Auto E3 FM3164/31(L)276 64Kb; 3.3, 5.0 V; 1 MHzI2C;Ind1;RTC4;Power Fail; Watchdog; Counter 4Kb-256Kb FM25C160/L16 16Kb; 3.3, 5.0 V 20 MHz SPI; Ind1, Auto E3 FM24C16/CL16 16Kb; 3.3, 5.0 V 1 MHz I2C; Ind1 FM25040/L04 4Kb; 3.3, 5.0 V 20 MHz SPI; Ind1, Auto E3 FM24C04/CL04 4Kb; 3.3, 5.0 V 1 MHz I2C; Ind1 Production Sampling Development Concept Status 1 Industrial grade: -40ºC to +85ºC 2 AEC-Q100: -40ºC to +85ºC 3 AEC-Q100: -40ºC to +125ºC 4 Real-time clock Availability QQYY QQYY NVRAM Product Overview Product Family Presentation Roadmap

  11. Here’s How to Get Started Vaulted: NVRAM Product Overview, 001-90292, Rev *A • 1. Select Cypress serial F-RAM products in the F-RAM Product Selector Table and click “Order” for free samples • 2. Download the SPI Guide for F-RAM • 3. Register to access online technical support: https://secure.cypress.com/myaccount/ Infotainment System by Hyundai Automotive Safety System by Hyundai Motor Control by SEW Smart E-Meter by Landis + Gyr Multifunction Printer by Ricoh Digital Hearing Aidsby Oticon NVRAM Product Overview Product Family Presentation Getting Started

  12. Cypress NVRAM Parallel nvSRAM NVRAM Product Overview Product Family Presentation Divider

  13. Parallel Nonvolatile Memory Terms Vaulted terms per ToA Library Spec 001-91320, Rev *G • Nonvolatile Memory (NVM) • Memory that retains data on power loss • Nonvolatile Random Access Memory (NVRAM) • An NVM that allows direct access to stored data in any random order • Write Endurance • The number of times an NVM cell can be rewritten before it wears out • Silicon Oxide Nitride Oxide Silicon (SONOS) • A transistor with a polysilicon gate (S), an Oxide Nitride Oxide (ONO) gate dielectric and a Silicon substrate (S) used to create a Nonvolatile Memory storage cell • Nonvolatile Static Random Access Memory (nvSRAM) • Fast SRAM memory with a SONOS NVM cell embedded in each SRAM cell to retain data on power loss • Battery-Backed SRAM (BBSRAM) • SRAM connected to a battery to store data on power loss • Restriction of Hazardous Substances (RoHS) • A European Union directive intended to eliminate the use of environmentally hazardous material in electronic components • Redundant Array of Independent Disks (RAID) • A storage technology that uses two or more disk drives for redundancy NVRAM Product Overview Product Family Presentation ToA

  14. Parallel NVM Design Problems Vaulted: NVRAM Product Overview, 001-90292, Rev *A • 1. Many systems require fast NVMs with high Write Endurance • Traditional EEPROM or Flash Nonvolatile Memories have slow write times (>1 ms) and limited Write Endurance • Low-power asynchronous SRAMs have 20-ns to 45-ns access times but require battery backup to store data on power loss • 2. Batteries increase cost, add design complexity, and compromise reliability and RoHS compliance • Batteries, power-management circuits and firmware add cost and complexity, and reduce reliability • Coin cell batteries have a limited lifetime, which mandates periodic system maintenance and downtime • Data is lost if battery charge is drained before the system power is restored, which mandates fast time-to-repair • Batteries contain heavy metals and violate RoHS compliance • nvSRAM solves these problems • Provides 20-ns read/write SRAM access time with unlimited endurance • Requires no batteries to retain data on power loss for unlimited periods • Stores data reliably at power loss without the need for external power-management circuits and firmware • Complies with RoHS requirements Cypress RoHS-compliant nvSRAMs are significantly faster than traditional NVMs, and more reliable and easier to implement than BBSRAM solutions NVRAM Product Overview Product Family Presentation Design Problems

  15. Parallel nvSRAM Is a Better Solution Simplify a complex BBSRAM-based design… By choosing nvSRAM as your parallel Nonvolatile Memory solution… To produce more reliable solutions for mission-critical applications at a lower cost. Standard SRAM memory RAID Storage Industrial Automation Computing and Networking Avionics and Defense Electronic Gaming Battery required to retain data on power loss Battery-free parallel nvSRAM solution Extra board area for battery NVRAM Product Overview Product Family Presentation Solution

  16. Cypress Parallel NVRAM vs. Competition’s 1 Low-power 16Mb asynchronous SRAM 2 Conditions: Max current, x16, 45 ns (nvSRAM), 45 ns (asynchronous SRAM), 35 ns (MRAM), 2.7 to 3.6 V, −40° C to +85° C NVRAM Product Overview Product Family Presentation Competition

  17. nvSRAM PortfolioHigh Density | High Speed CY14V116F/G 16Mb; 3.0, 1.8 V I/O 30 ns; ONFI3 1.0 x8, x16; Ind1 CY14B116R/S 16Mb; 3.0 V 25, 45 ns; x32; Ind1 RTC2 Higher Densities DDRx6nvSRAM NDA Required Contact Sales Q414 Q414 Higher Densities QSPI5nvSRAM NDA Required Contact Sales CY14B108K/L 8Mb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14B108M/N 8Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 CY14B116K/L 16Mb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14B116M/N 16Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 Q414 Q414 512Kb-16Mb CY14V101PS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI5; Ind1 RTC2 CY14V101QS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI5; Ind1 Q215 Q215 CY14B104K/LA 4Mb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14V104LA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind1 CY14B104M/NA 4Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 CY14V104NA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind1 CY14B101I 1Mb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 CY14B101KA/LA 1Mb; 3.0 V 25, 45 ns; x8; Ind1RTC2 CY14V101LA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind1 CY14B101MA/NA 1Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 CY14V101NA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind1 CY14B512P 512Kb; 3.0 V 40 MHz SPI; Ind1 RTC2 CY14B512I 512Kb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 CY14B101P 1Mb; 3.0 V 40 MHz SPI; Ind1 RTC2 CY14B256KA/LA 256Kb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14V/U256LA 256Kb; 3.0, 1.8V I/O 35 ns; x8; Ind1 CY14E256LA 256Kb; 5.0 V 25, 45 ns; x8; Ind1 STK14C88-5 256Kb; 5.0 V 35, 45 ns; x8; Mil4 CY14B256P 256Kb; 3.0 V 40 MHz SPI; Ind1RTC2 CY14B256I 256Kb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 64Kb-256Kb STK11C68-5 64Kb; 5.0 V 35, 55 ns; x8; Mil4 STK12C68-5 64Kb; 5.0 V 35, 55 ns; x8; Mil4 CY14B064P 64Kb; 3.0 V 40 MHz SPI; Ind1 RTC2 CY14B064I 64Kb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 Production Sampling Development Concept Status 4 Military grade: -55ºC to +125ºC 5 Quad Serial Peripheral Interface 6 Double Data Rate 1 Industrial grade: -40ºC to +85ºC 2 Real-time clock 3 Open NAND flash interface Availability QQYY QQYY NVRAM Product Overview Product Family Presentation Roadmap

  18. Here’s How to Get Started Vaulted: NVRAM Product Overview, 001-90292, Rev *A • 1. Select Cypress parallel nvSRAM products in the nvSRAM Product Selector Table and click “Order” for free samples • 2. Download the App Note: A Comparison Between nvSRAMs and BBSRAMs • 3. Register to access online technical support: https://secure.cypress.com/myaccount/ Programmable Logic Controller by Siemens Router by Cisco Slot Machine by IGT RAID Card by LSI Avionics Subsystem by Rockwell Collins NVRAM Product Overview Product Family Presentation Getting Started

  19. References and Links New slide • Cypress Nonvolatile products website: www.cypress.com/nonvolatile • The source for all of our publicly available nonvolatile product documentation and collateral • Cypress Nonvolatile products roadmap: Cypress Nonvolatile RAM Roadmap • Datasheets and NDA roadmap requests: Cypress Sales Representative or emailCypressfram@cypress.com • Application notes: Nonvolatile Products Application Notes • Knowledge base articles: Nonvolatile Products Knowledge Base Articles • Download the SPI Guide for F-RAM • Download the application note: A Comparison Between nvSRAMs and BBSRAMs • Select Cypress serial F-RAM products in the F-RAM Product Selector Table and click “Order” for free samples • Select Cypress parallel nvSRAM products in the nvSRAM Product Selector Table and click “Order” for free samples • Register to access online technical support: https://secure.cypress.com/myaccount/ NVRAM Product Overview Product Family Presentation References

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