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Low-Power Circuits for a 2.5-V, 10.7-to-86-Gb/s Serial Transmitter in 130-nm SiGe BiCMOS

Low-Power Circuits for a 2.5-V, 10.7-to-86-Gb/s Serial Transmitter in 130-nm SiGe BiCMOS. Tod Dickson University of Toronto June 9, 2005. Motivation. Ever-growing bandwidth demands results in higher data rate broadband transceivers Next generation wireline applications will exceed 80-Gb/s.

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