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Process and Material Properties Of PECVD Boron-Doped Amorphous silicon Film.

Process and Material Properties Of PECVD Boron-Doped Amorphous silicon Film. Abstract Authors: Helinda Nominanda and Yue Kuo. Presented by Chakravarthy. Thin Film Microelectronics Research Laboratory Department of Chemical Engineering Texas A&M University,College Station,TX.

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Dopant gas flow - PowerPoint PPT Presentation

Process and Material Properties Of PECVD Boron-Doped Amorphous silicon Film.