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Process and Material Properties Of PECVD Boron-Doped Amorphous silicon Film.

Process and Material Properties Of PECVD Boron-Doped Amorphous silicon Film. Abstract Authors: Helinda Nominanda and Yue Kuo. Presented by Chakravarthy. Thin Film Microelectronics Research Laboratory Department of Chemical Engineering Texas A&M University,College Station,TX.

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Process and Material Properties Of PECVD Boron-Doped Amorphous silicon Film.

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  1. Process and Material Properties Of PECVD Boron-Doped Amorphous silicon Film. Abstract Authors: Helinda Nominanda and Yue Kuo. Presented by Chakravarthy

  2. Thin Film Microelectronics Research LaboratoryDepartment of Chemical EngineeringTexas A&M University,College Station,TX.

  3. The effect of temperature and dopant gas flow on PECVD boron-doped amorphous silicon film properties such as deposition rate and resistivity were studied.

  4. Deposition Process. • Films were deposited at 50 KHz using a cold wall reactor with horizontal electrodes. • A 2000 Angstrom thick PECVD silicon nitride film was deposited on a glass substrate as an adhesion layer. • Temperature of 100-300 degree Celcius • 40-200 sccm of diborane + 400 sccm of hydrogen +35 sccm silane(99.999%) • Pressure at 0.25 Torr • Power density of 205 mW/sq.cm.

  5. *The substrate temperature has a more pronounced effect on the deposition rate than the dopant gas flow rate.

  6. *Resistivity decreases with temperature. *A more uniform resistivity is achieved at higher temperatures.

  7. Applications of PECVD Amorphous Silicon Films. • TFT arrays of active matrix liquid crystal display(AMLCDs) • p-I-n junction capacitors • Solar cells and Optoelectronic devices.

  8. Summary Deposition parameters have huge impact on the material properties of the PECVD boron-doped amorphous silicon films.

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