'Doping profile' presentation slideshows

Inverse Problems in Semiconductor Devices

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Simulations with TCAD

588 views • 35 slides

Emil Voiculescu Technical University of Cluj, RO

Improving the beam quality by concurrently modifying the index and the doping profile in LMA fibers. Emil Voiculescu Technical University of Cluj, RO. Introduction.

490 views • 34 slides

EE 5340 Semiconductor Device Theory Lecture 11 - Fall 2003

EE 5340 Semiconductor Device Theory Lecture 11 - Fall 2003. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc. E FN. Band diagram for p + -n jctn* at V a = 0. E c. qV bi = q( f n - f p ). q f p < 0. E c. E Fi. E FP. E v. E Fi. q f n > 0.

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EE 5340 Semiconductor Device Theory Lecture 12 - Fall 2009

486 views • 32 slides

Latest measurements of LGAD diodes f abricated at IMB-CNM

376 views • 21 slides

Device doping profile and energy band structure

p*-n-n* diode CV characteristics changes at various contact and body doping concentrations. TCAD simulation Ernestas Zasinas, Rokas Bondzinskas, Juozas Vaitkus Vilnius University, Vilnius, Lithuania. Device doping profile and energy band structure. contact doping: p+ type,

284 views • 11 slides

Chapter 7. Small-signal admittance

Chapter 7. Small-signal admittance. We will study the small signal response of the pn junction diode. A small ac signal ( v a ) is superimposed on the DC bias. This results in ac current ( i ). Then, admittance Y is given by: Y = i / v a = G + j ? C

311 views • 8 slides