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Atomic functionalities in Silicon devices: go beyond the FET by using single dopants and artificial silicon atoms

SINANO-NANOSIL Workshop Edinburgh September 19th, 2008. Atomic functionalities in Silicon devices: go beyond the FET by using single dopants and artificial silicon atoms A presentation of the AFSiD european project by Marc SANQUER, Coordinator. Atomic Functionalities on Silicon Devices.

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Ion beam induced charge - PowerPoint PPT Presentation

Atomic functionalities in Silicon devices: go beyond the FET by using single dopants and artificial silicon atoms