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Semiconductor Device Modeling and Characterization EE5342, Lecture 20 -Sp 2002

Semiconductor Device Modeling and Characterization EE5342, Lecture 20 -Sp 2002. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Equivalent circuit above OSI. Depl depth given by the maximum depl = x d,max = [2 e Si |2 f p |/(qN a )] 1/2

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Semiconductor Device Modeling and Characterization EE5342, Lecture 20 -Sp 2002