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Characterisation of the Strain Gauge Factor at Cryogenic Temperature. Mechanical Measurement Lab , 17.06.2011 T.Dijoud. Summary. Introduction Goal of the study Method Results Conclusion. Introduction : Strain gauges. APPLICATION : Strain measurement Stress analysis MATERIALS :
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Characterisation of the Strain Gauge Factor at Cryogenic Temperature Mechanical Measurement Lab, 17.06.2011 T.Dijoud
Summary • Introduction • Goal of the study • Method • Results • Conclusion
Introduction : Strain gauges • APPLICATION: Strain measurement Stress analysis • MATERIALS: • Measuring grid (5μm thickness) : Chromium-Nickel alloys, Copper-Nickel alloys • Support (25μm thickness): Polyimide All type for several applications Between 0.6 and 160 mm
Introduction : Strain gauges Close bond between the strain gauge and the object • Strain on the object transferred without loss to the strain gauge PRINCIPLE: WIRE RESISTANCE CHANGING WITH LENGTH OF WIRE R = ρL/S(ρ: resistivity (Ω.m); L: length (m); S: section (m2)) • ∆R/R = ε (1 + 2ν) + ∆ ρ/ ρ(ε: strain = ∆L/L (μm/m); ν: Poisson coefficient) F (N) F (N)
Introduction : Strain gauges Bridgman’s law: ∆ρ/ρ = C ∆v/v (C: Bridgman constant, ranging from 1.13 to 1.15) • ∆R/R = ε ((1 + 2ν) + C(1 – 2ν)) k = (1 + 2ν) + C(1 – 2ν) ∆R/R = k ε • k : Strain gauge factor = Strain gauge sensitivity Depends on: • Material of measuring grid • TEMPERATURE ∆R/R (μΩ/Ω) ∆L/L (μm/m)
Goal of the study • GOAL: Characterise the strain gauge factor at 293K, 77K and 4.2K NEW STRAIN GAUGES, NEW ADHESIVE, MORE ADVANCED DATA ACQUISITION SYSTEM • WHY?Measurement conditions at CERN: 1.9 K to 500 K Strain measurements must be accurate Application: Stress measurements during assembly and cryogenic cool down at 4.2 K of short magnet coil
Tests procedure COMPARISON BETWEEN 2 TECHNIQUES OF STRAIN MEASUREMENT Reference sensor Strain gauges StrainResistancerelative change (∆L/Lo)Ref ∆R/Ro = (∆V/Vo)SG ̃ k = • STEPS: • Find a way to measure strain with a great accuracy • Identify the set up for the measurements at room and cryogenic temperature
Strain measurement Cryogenic temperature = cryostat • WHAT IS NEEDED: Sensor inside the cryostat • Must work at low temperature • Not too big, easy to install • Great accuracy • TECHNIQUE: STRAIN = EXTENSION (∆L) / INITIAL LENGTH (L) LVDT (Inductive sensor) : Infinite resolution Low linearity error
Method TENSILE TEST LVDT Strain gauge on each side (¼ Bridge (X2)) LO = 60 mm LVDT and extension support Sample instrumentation
Method: Set up Fmax = 5kN Bellow Vacuum CRYOSTAT 77 K Nitrogen 4.2 K Helium Sample Tensile machine
Sample design Requirements: - Strain does not exceed the yield limit of the material e εm =
Accuracy of the measurements • Displacement (LVDT) - DAQ Linearity : 0.02 % FS ULDAQ = (0.02*2)/3 = 0.013 % - DAQ Precision : (0.05 % Meas. Value + 0.05 % FS) UPDAQ = (0.05*4)/3 = 0.067 % UDis = 0.18 % - Linearity error LVDT : 0.25 % FS UL = (0.25*2)/3 = 0.17 % UStrain = 0.19 % • Initial length - Resolution of the caliper + Repeatability: ULength= 0.071 % • Output signal (SG) - DAQ Linearity: 0.013 % - DAQ Precision: 0.067 % UOS = 2.67 % - Accuracy of strain gauge measurement: 2.67% GAUGE FACTOR ACCURACY : Uk = (0.192+2.672)1/2 = +/- 5.35 %
Conclusion • k-factor value satisfactorily close to the value given by the manufacturer • What we are looking for: Variations of the gauge factor • Between 293K and 77K, k-factor increases by 6.9% • Set up (sample instrumentation) validated for the measurements • NEXT STEPS: • Tests with others samples Check the reproducibility of the experiment • Use the original cryostat for the tests at 293K, 77K and 4.2K
Thanks to Thanks to Ofelia Capatina and Ramon Folch for this period at CERN Thanks to Michael, Eugenie, Andrey, Raul, Alex, Robin, Jean-Michel, Kurt and Rosmarie Thank you for your attention!
Last study k factor changing with temperature last study: 1995
LVDT 1 calibration at room temperature Micrometer
Wheatstone bridge • Bridge equation: • Vout/Vin = • Application with strain gauges: • Vout/Vin = • Configuration: • ¼ bridge • half bridge • full bridge • For the experiment: 1/4 bridge R1+∆R1 R3+∆R3 R2+∆R2 R4+∆R4 Very low ∆R can be measured For 2000 µm/m, ∆R = 11µΩ