230 likes | 324 Views
Research Projects. Dr Martin Paul Vaughan. available from http://www.physics.ucc.ie/mvaughan/pdf/Research_Projects.pdf. Research Background. Research Background Transport theory Scattering in highly mismatched alloys Density functional calculations
E N D
Research Projects Dr Martin Paul Vaughan available from http://www.physics.ucc.ie/mvaughan/pdf/Research_Projects.pdf
Research Background • Research Background • Transport theory • Scattering in highly mismatched alloys • Density functional calculations • First principles approach to alloy scattering
Proposed projects • Proposed projects • Develop DFT calculations of carbon in SiGe • Investigation of structural stability of graphene-like materials • Develop code / theory for true 2D transport • Solution of the Boltzmann Transport Equation • Development of Monte Carlo code (possible collaboration with University of Bristol)
Transport theory Solutions of the Boltzmann Transport Equation Development of the ‘ladder’ method for polar optical phonon scattering (non-parabolic 3D & 2D) [1-4]
Transport theory High field effects Hot electron transport [6] Hot phonon effects in semiconductors [5]
Highly mismatched alloys Green’s function approach to understanding band structure and scattering in dilute nitrides Density of states [2-4, 7-9] Scattering [1-4]
Density Functional Theory (DFT) • Overview: • First Principles method for dealing with intractable many-body problem • Observables of the lowest energy state – the ground state are obtained via functionals • For example: an integral is a functional of the integrand that yields a scalar value • In DFT, we deal with functionals of the ground state density. http://en.wikipedia.org/wiki/Density_functional_theory
Density Functional Theory (DFT) • We use the DFT code ABINIT (others available) • Examples: band structure of Si and Ge • These use the local density approximation (LDA) http://www.abinit.org/
First Principles approach to alloy scattering n-type scattering due to C in Si [10] Currently working on p-type mobility for C in SiGe alloys. n-type mobility Si(1-x)C(x) [10]
DFT calculations of C in SiGe C in Ge: possible hybridization of conduction and valence bands. Possible localised state forming in valence band.
DFT calculations of C in SiGe • Is hybridisation real? • Is a localised state forming? • Problems with convergence for C in Ge? • Investigations (beyond LDA): • Relaxed ground state calculations already performed. Based on these, we can investigate • Scissor operator • GGA calculations • GW calculations http://www.abinit.org/
DFT calculations of C in SiGe • Student training by supervisor: • General introduction to DFT • Exchange-correlation functions • Pseudopotentials • Working in a UNIX environment • Basic calculations with ABINIT (or other DFT code) • Use of supercells • Guidance through existing ABINIT input files / post-processing code for C in SiGe http://www.abinit.org/
Investigation of novel graphene-like materials Calculated ground state densities graphene silicene germanene BN AlN GaN
Investigation of novel graphene-like materials • Investigation of structural stability • Buckling of structure • Formation energies • Tensile properties (Young’s modulus, Poisson ratio) • Chemical / molecular structures • Monatomic / bi-atomic layers etc. • Hydrogen on p-bonds etc. • Epitaxial substrates etc.
Investigation of novel graphene-like materials • Student training by supervisor: • General introduction to DFT • Exchange-correlation functions • Pseudopotentials • Background for graphene-like materials • Working in a UNIX environment • Basic calculations with ABINIT (or other DFT code) • Use of 2D supercells • Existing ABINIT input files http://www.abinit.org/
Transport in true 2D Pseudo-2D structures: e.g. the quantum well Quantised energy levels due to confinement Often approached using Quantum Transport for low carrier densities and Semi-classical Transport for high densities. Step-like density of states
Transport in true 2D • Semi-classical model for phonon scattering developed for 2D [3-4] • Still needs to be generalised for a magnetic field • Quantum wells and lines etc. are pseudo-2D in that they still have thicknesses of many atomic layers • Graphene-like materials may be considered as being true 2D – no quantized levels due to confinement.
Transport in true 2D • Development of code for true and pseudo 2D transport • Incorporation of magnetic field into semi-classical pseudo 2D model • Investigation of quantum / semi-classical cross-over • Consideration of methodology for semi-classical approach (heavily assisted): • Direct solution of Boltzmann’s Transport Equation (BTE) • Monte Carlo simulation
Transport in true 2D • Student training by supervisor: • General introduction to transport theory • Programming in C++/Matlab • Working from existing C++ code (supervisor’s) for direct solution of BTE • Possible collaboration with Bristol University working on existing MatLab code for Monte Carlo simulation (may involve visit to meet author of code)
Projects Summary • DFT calculations of carbon in SiGe* • Investigation of graphene-like materials* • True 2D transport • Boltzmann Transport Equation (BTE) • Monte Carlo (MC) code† *Tyndall; †Possible collaboration with Uni. Bristol;
References [1] M.P. Vaughan and B. K. Ridley, Solution of the Boltzmann equation for calculating the Hall mobility in bulk GaNxAs1-x, Phys. Rev. B 72, 075211 (2005) [2] M.P. Vaughan and B.K. Ridley, Electron-nitrogen scattering in dilute nitrides, Phys. Rev. B 75, 195205 (2007) [3] M.P. Vaughan and B. K. Ridley, The Hall Mobility in Dilute Nitrides, Dilute III-V Nitride Semiconductors and Material Systems, Physics and Technology, Ed. A. Erol, Springer Berlin Heidelberg (2008) [4] M.P Vaughan, Alloy and Phonon Scattering: Development of Theoretical Models for Dilute Nitrides, VDM Verlag Dr. Müller (2009) ISBN: 978-3639130867 [5] Y. Sun, M.P. Vaughan et al., Inhibition of negative differential resistance in modulation doped n-type Ga(x)In(1-x)N(y)As(1-y)/GaAs quantum wells, Phys Rev B 75, 205316 (2007) [6] M.P. Vaughan, Hot Electron Transport, Semiconductor Modeling Techniques, Springer Series in Materials Science 159, Springer Berlin Heidelberg (2012) [7] M.P. Vaughan and B. K. Ridley, Effect of non-parabolicity on the density of states for high-field mobility calculations in dilute nitrides, Phys. Stat. Sol. (c) 4, 686 (2007) [8] L Ivanova, H Eisele, MP Vaughan, P Ebert, A Lenz, R Timm, O Schumann, et al, Direct measurement and analysis of the conduction band density of states in diluted GaAs(1- x)N(x) alloys, Phys Rev B 82, 161201 (2010) [9] MP Vaughan, S Fahy, EP O'Reilly, L Ivanova, H Eisele and M Dähne, Modelling and direct measurement of the density of states in GaAsN, Phys. Stat. Sol. (b) 248, 1167 (2011) [10] M.P. Vaughan, F. Murphy-Armando and S. Fahy, First-principles investigation of the alloy scattering potential in dilute Si(1-x)C(x), Phys. Rev. B 85, 165209 (2012)