Radiation Effects on Emerging Electronics Materials & Devices MURI Annual Review

1. Radiation Effects on Emerging Electronics Materials & Devices MURI Annual Review • Welcome & Thanks for Being Here! • AFOSR PM: Kitt Reinhardt (703)588-0194 • This MURI Represents AFOSRs FlagShip • Radiation Effects Electronics Program • AF & DoD Requires SOTA Performance • Electronics that are Reliable & Rad-Hard • to Maintain Asymmetrical Warfighter • System Capabilities Advantage

2. Key Issues Commercial Off The Shelf (COTS) Parts • COTS optimized for • major com’l appl’s •  ‘just enough’ IC’s •  < 7 yr lifetime •  reliability traded • for performance •  unknown rad & rel • sensitivities of new • matl’s & structures • Lack of test, eval, vali- • dation approaches+data com’l specs do not meet reqt’s com’l specs meet system requirements 1 4 5 upscreen IC (show it can meet spec) reduce system spec to meet com’l spec 2 3 Paramount Challenge nitch ‘dedicated’ IC fabs with ‘process hardened’ technology hardened-by-design (HBD) + main- stream com’l fabs unknown reliability and radiation sensitivities of new materials, processes, device geometries & circuits • ~1 gen behind com’l • HBD design & validation • unknown rad & rel • sensitivities of new tech. • 2-3 gen’s behind com’l • 2 fabs; >$600M/fab to upgrade • unknown rad/rel sensitiv- • ities of new tech < 0.25m KC’s Future DoD Electronics Challenges DoD Electronics Requirements: 1) SOTA Performance + 2) Reliable for 5-20 yrs + 3) Radiation Hard + 4) Affordable

3. Traditional Si, p-Si, SiO2, & Al Have Reached Their Material Limits! Circa Late 1990s Circa Mid-Late 2000s • SiO2 Gate Insulator • Polysilicon Gate • Aluminum Interconnect • SiO2 Interlevel Dielectric • Silicon Channel • Silicon Substrate • SiO2 DRAM Capacitor • High-k dielectric (TBD) • Metal(s) (TBD) • Cu Interconnects • Low-k dielectric (aerogel,…) • SiGe (strained) • Silicon-on-Insulator (SOI) • High-k dielectric (TBD) Unprecedented Number of New Materials Req’d for IC Scaling Industry Acknowledges Concerns “Emerging tech nodes require the introduction of new matl’s at a rate that exceeds current capabilities for generating required database and models on new failure regimes and defects. Further increased scaling will make it difficult to maintain current reliability levels. We have entered the era of material limited device scaling and reliability!”(ITRS:2004) 1950-1990 (Si, SiO2, Al); 1990-2000 ~ 1 new mat’l/gen; 2000-2010 ~ 2-3 new matl’s/gen

4. COTS Reliability Trends Com’l part reliability 2-7yrs, DoD requires 1-20yrs CMOS IC Lifetime 150 2002 1990 C 17 yrs 85 1.8 yrs 70 7 yrs 50 30 yrs 104 105 103 Time (hrs) U. Maryland/Boeing IC Lifetime Trends @ 70C 100 Process Lifetime & Variation 10 IC Lifetime (yrs) <2 yrs @ 130nm 1 90nm 1.0m 0.35m 0.18m 0.13m 1995 1990 2000 2005 SDI Smaller & Faster CMOS Devices • reduced feature size →inc.temp and tremendous leakage currents  increased hot carrier effects, oxide breakdown, and electromigration New Materials & Device Structures • 1-3 new matl’s each generation and new device structures introduced  reliability sensitivities unknown Loss of Expertise in Reliability Analysis 1994 Acq. reforms dismantled gov’t electronics T&E infrastructure. Reliability community is lagging fabs in identifying/modeling new failure modes Smaller Devices + New Matl’s + New Device Structures = Reduced Reliability

5. High Altitude Nuclear Detonation (HAND) Trapped Van Allen Belt Electrons & Protons Solar Protons & Heavy Ions Galactic Cosmic Ray Heavy Ions & Protons Key DoD future space DoD missions will Concerns increasingly rely on COTS parts: 1) reduced feature size: 90nm  45nm inc’d SEEs 2) unprecendented number of new processes & materialsunknown radiation sensitivities : Natural & Man-Made Space Rad Environment Defines DoD’s Unique Electronics Reqt’s • Natural Space Environment: graceful degradation & repeated upsets • HANDwould cause total failure of electronics in weeks to months

6. RHOC 6.1 Roadmap