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Single Event Burnout testing of high power Schottky diodes

Single Event Burnout testing of high power Schottky diodes. Presented by Pierre GARCIA Enoal LE GOULVEN, Fabien WIDMER, Athina VAROTSOU with the support of Cesar BOATELLA-POLO Contract No 4000118250. Introduction. This project at a glance : 40h of beam Around 270 Runs

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Single Event Burnout testing of high power Schottky diodes

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  1. Single Event Burnout testing of high power Schottky diodes Presented by Pierre GARCIA Enoal LE GOULVEN, Fabien WIDMER, Athina VAROTSOU with the support of Cesar BOATELLA-POLO Contract No 4000118250

  2. Introduction This project at a glance : • 40h of beam • Around 270 Runs • 20 references tested • Around 100 parts irradiated

  3. Introduction • Silicon Schottky diodes have been traditionally considered immune to destructive SEE • Recent works published on literature have shown that silicon power Schottky diodes may be sensitive to destructive events while reverse biased under heavy ion irradiation • This activity consists of performing SEB test under heavy ions on 20 different references of 7 different manufacturers • For this study parts were provided by STMicroelectronics, Thales Alenia Space and Airbus Defence and Space

  4. Previous campaign 2015 QPL product New generation prototype

  5. Results Irradiation performed at Ganil Fail : IR > IR @ VRRM • All QPL parts considered PASS at 75% • These parts are used on space mission at 75% maximum Vr • New prototypes are considerably more sensitive to SEB Number XX% : Value of the % of VRMAX PASS: IR < IR @ VRRM

  6. Previous campaign Results Focus on STM Schottky diode result Two different failure signature were observed on the during the first GANIL campaign. Current step was the most common. Ir degradation with fluence was only observed in some of the new prototypes.

  7. Parts information 1/2

  8. Parts information 2/2

  9. Test procedure and setup Irradiation performed at UCL PASS FAIL IR>IRMax PASS FAIL • PIST (Post-Irradiation STress) Test : After the irradiation, a stress is applied to the diode in order to reveal any latent damage on the irradiated devices.

  10. Test procedure and setup STATUS CRITERIA • SEB / Fail: abrupt leak of Ir during irradiation |Ir| > IR (@VRRM) • Failed PIST: abrupt leak of Ir during stress test |Ir| > IR (@VRRM)

  11. SEE tests: Beam description Irradiation facility: U.C.L.

  12. Results The derated accepted is 75% of @VRMax Fail : IR > IR @ VRRM * Silicone carbide diode Number XX% : Value of the % of VRMAX PASS: IR < IR @ VRRM

  13. Results Fail : IR > IR @ VRRM PART could be FAIL but not necessary not functional PART could be FAIL but not necessary not functional * Silicone carbide diode PASS: IR < IR @ VRRM

  14. STMicroelectronics Results • 2 references Fail after a PIST due to a degradation of the leakage current (for the example IRmax respectively equal to 3.5µA and 20µA) * Silicone carbide diode

  15. STMicroelectronics Results • 2 references Fail after a PIST due to a degradation of the leakage current (for the example IRmax respectively equal to 3.5µA and 20µA) * Silicone carbide diode Parts still functional but out of criteria IRmax = 20µA IRmax = 3.5µA IRmax = 3.5µA

  16. Results * Silicone carbide diode

  17. Internal Rectifier Results Focus on IR Schottky diode result

  18. Results Focus on IR Schottky diode result PARTS are still functional

  19. Results * Silicone carbide diode : No information on literature about the sensitivity of SiC diode SiC diodes are most sensitive to destructive event

  20. Results Focus on SiC Schottky diode result Degradation by step was also observed

  21. Results Focus on SiC Schottky diode result Abrupt degradation of the leakage current has been observed too

  22. Results Focus on SiC Schottky diode result Increase of leakage current is directly proportional to the fluence and flux These signatures were observed for the 3 references of SiC diode.

  23. CONCLUSION • 11 of the 20 references tested are degraded due to heavy ions irradiation • SiC diode technology is more sensitive than Si diode technology • More investigation on SiC diode have to be performed in order to understand the different phenomenon observed

  24. ? ? TRAD Thank you for your attention, any question ? TRAD Gamma irradiation facility GAMRAY is accredited in compliance with ISO/IEC 17025 standard under n°1-6110 for gamma irradiation, dose deposit.

  25. Results Focus on SiC Schottky diode result • This increase of leakage current is directly proportional to the fluence and flux • Signatures observed on the 3 SiC reference

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