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IBICC ANALYSIS OF SiC SCHOTTKY DIODES

IBICC ANALYSIS OF SiC SCHOTTKY DIODES C. Manfredotti 1 , E. Vittone 1 , A. Lo Giudice 1 , C. Paolini 1 , F. Fizzotti 1 , F.Nava 2 1 Dip. Fisica Sperim., Università di Torino, INFM- Unità di Torino Università, via P.Giuria 1, 10125 Torino (I)

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IBICC ANALYSIS OF SiC SCHOTTKY DIODES

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  1. IBICC ANALYSIS OF SiC SCHOTTKY DIODES • C. Manfredotti1, E. Vittone1, A. Lo Giudice1, C. Paolini1, F. Fizzotti1, F.Nava2 • 1Dip. Fisica Sperim., Università di Torino, INFM- Unità di Torino Università, via P.Giuria 1, 10125 Torino (I) • 2 Dipartimento di Fisica, Universitá di Modena, Via Campi 213/A, 41100 Modena, Italy

  2. Summary • Review of previous measurements with 2 MeV protons • Preliminary results with Li and proton microbeams with energies from 0.7 to 1.7 MeV: new determination of hole diffusion length • Results with 3 keV x-ray microbeam at ESRF

  3. SiC as a nuclear particle detector and X-ray spectrometer : • high resistance to radiation damage • larger band gap ( 3.3 eV ) and very low dark current • higher carrier saturation velocity ( 2 x GaAs ) • higher breakdown electrical field ( 0.3 MV/cm ) • large thermal conductivity • satisfactory electrical homogeneity • Problems and drawbacks : • thin depletion layer widths • defects at the interface of epilayers • contacts technology and surface treatments • pair creation energy not well known

  4. 4H-SiC from CREE Research; contacts from ALENIA Nominal active layer doping concentration: (Nd-Na)=2.2x1015 cm-3

  5. IBICC Set up

  6. Proton energy 2 MeV

  7. 2 MeV Li

  8. IBIC maps: protons on SiC

  9. Charge collection efficiency protons on SiC

  10. The ID21 scanning X-ray microscope (SXM) ESRF -Grenoble 3 keV x-ray

  11. X-ray microbeam at ESRF - Grenoble • spot size < 100 nm • 3 KeV X-ray energy : attenuation depth in SiC 4 mm • Au contact ( 100 nm thick ) attenuation 33 % • Measurement details : • photocurrent : Keithley 617 electrometer with output coupled to a voltage-to-frequency converter • pulse counting in a 100 ms time window ( 1 pulse = 2 pA ) • bias voltage 50 V • “ photocurrent spectra “ plotted in the same way as X-ray multichannel spectra obtained in pulse mode

  12. Conclusions : • SiC epilayers electrically very homogeneous • electrical homogeneity increases with bias voltage • probable presence of extended electrical defects both at the surface and at the interface of the epilayer • first direct evaluation of hole diffusion length by variable energy frontal IBICC • hole diffusion length in a SiC n-epilayer, 2.2x1015 cm-3 net doping, evaluated as 8.5 um ; hole lifetime calculated as 0.24 ms

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