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Recent development of the SIThy and its applications RPIA2006 on March 7, 2006

Recent development of the SIThy and its applications RPIA2006 on March 7, 2006. *Naohiro Shimizu **Susumu Yoshida, Akira Sugiyama, Katsufumi Nakanishi ***Weihua Jiang, Kyosuke Nakahiro, and Kiyoshi Yatsui ****Ken Takayama, Mitsuo Akemoto, Hikaru Sato, Eiji Nakamura,

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Recent development of the SIThy and its applications RPIA2006 on March 7, 2006

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  1. Recent development of the SIThy and its applicationsRPIA2006on March 7, 2006 *Naohiro Shimizu **Susumu Yoshida, Akira Sugiyama, Katsufumi Nakanishi ***Weihua Jiang, Kyosuke Nakahiro, and Kiyoshi Yatsui ****Ken Takayama, Mitsuo Akemoto, Hikaru Sato, Eiji Nakamura, Toshihiro Mimashi *NGK Insulators, LTD **Shindengen Electric MFG. CO., LTD ***Nagaoka University of Technology ****High Energy Accelerator Research Organizations

  2. Actions of SIThyrisorBullied and Junction Gate type Cathode + Depletion layer + + Anode Off state Turn-on state Turn-off state

  3. Si powerdevices

  4. Bullied gate typed SIThys developed within 10 years2006 15mm/12mm Φ36mm Φ62mm

  5. Adequate high gate-driving make it possible to control the SIThy as high speed turn-on switch! by Tokyo Institute of Technology High dig/dt & Short up to 2.0E11A/s (～2.8E11As) dIA/dt

  6. SIThys for the Accelerator as Closing Switchesby KEK Table 5.3RT103Pの特性 4kV SIThy-unit 45kV Power Supply (a) Switching modulator for Klystron (b) Pulsed power supply for Kicker Magnet

  7. Low Inductive gate driver make it possible to control the SIThy as high speed switch! reducing the inductance around the Gate circuit Inductance ≈ 6nF ts=0.4μs (a) Turn-off waveforms by the Low Inductive gate driver. Inductance ≈ 50nF ts=1.7μs (b) Turn-off waveforms by the conventional gate driver.

  8. High Power Soft switching Inverters ; 5.4kHz, 210kVAAxially Resonant Commutated Pole (ARCP) Inverter for Electric Train Features of the SIThy, Short switching delay and storage time make it easy to realize low-noise soft switching inverters 2240mm / 850mm / 650mm by Japan Railways & Toyo Electric MFG

  9. Inductive Energy Storage (IES) pulsed power supply utilizes the features of SIThy low voltage input voltage , at the lowest as 24V High dVdt : 1.0E11V/s Vp:2.1kV IES Pulsed power supply Short and high voltage pulse can be generated by using the pulse-trance; Vp: over 30kV, peak dVdt: 2.0E11Vs, and pulse wavelength: 100ns,

  10. Summary • High voltage SIThys fits for the pulsed power and the soft switching applications. • The key technology to drive the SIThy is “high Gate driving”, which realize the short switching time. It is important to minimize the inductance around the Gate circuit. • The pulse power supply for the Klystron and kicker magnet by KEK made most of the features of SIThy having the high tolerance to the high current and to the high rise-up rated current as over 2.0E11A/s. • Inductive Energy Storage (IES) pulsed power supply makes most of the features of the junction-Gate typed SIThy and realizes the compact circuit, which generates high rise-up rated voltage as over 2.0E11V/s.

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