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SRAM A-Factors for Simple 6T SRAM Cell using Microprocessor Logic CMOS Process Technology

Average A-Factor = 161.67. SRAM A-Factors for Simple 6T SRAM Cell using Microprocessor Logic CMOS Process Technology. F, Company, Reference. A factor. Virtual Silicon libraries based on United Microelectronics (UMC) processes A-factors:

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SRAM A-Factors for Simple 6T SRAM Cell using Microprocessor Logic CMOS Process Technology

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  1. Average A-Factor = 161.67 SRAM A-Factors for Simple 6T SRAM Cell using Microprocessor Logic CMOS Process Technology

  2. F, Company, Reference A factor

  3. Virtual Silicon libraries based on United Microelectronics (UMC) processes A-factors: 0.25 mm, high-performance (10 tracks):2-in NAND/NOR: 371INV: 248MUX2: 867DFF: 2106 0.18 mm, high-performance (11 tracks), quoted max density = 93.5K gates/mm2, translating to 10.7 mm2/gate or 330F2 : 2-in NAND/NOR: 377INV: 251MUX2: 878DFF: 2133 0.15 mm, high-density (8 tracks), about 20% smaller than high-performance, quoted max density = 173K gates/mm2, translating to 5.8 mm2/gate or 258F2. 2-in NAND/NOR: 307INV: 205MUX2: 717DFF: 1638 If we assume contacted metal pitch = 2.5*F (e.g. MP = 0.625 mm for 0.25 mm), this gives ~60 MP2 for 2-in NAND/NOR, which is inline with BACPAC calcs

  4. Current recommendations: SRAM cell size = 150-160F2 Std. Cell size = 375F2?? SRAM overhead: use factor of 1.6 (60% overhead penalty) These areas don’t include any white-space consideration so the actual packing density should be lower

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