1 / 4

Large-Scale SRAM Variability Characterization Chip in 45nm CMOS

Large-Scale SRAM Variability Characterization Chip in 45nm CMOS. High end microprocessors continue to require larger on-die cache memory > 6 σ of statistics needed to capture the variability of large cache memories Problem: Getting statistics across large designs is $$ and difficult

kiril
Download Presentation

Large-Scale SRAM Variability Characterization Chip in 45nm CMOS

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Large-Scale SRAM Variability Characterization Chip in 45nm CMOS • High end microprocessors continue to require larger on-die cache memory • > 6σ of statistics needed to capture the variability of large cache memories • Problem: Getting statistics across large designs is $$ and difficult • Solution: Customized instrumentation on-chip

  2. Large-Scale SRAM Variability Characterization Chip in 45nm CMOS • Conventional Metrics – RSNM, IW, etc. • Limited silicon data • Cannot correlate to cell bit fails in functional SRAM 2.2mm×2.2mm • SRAM macros • All-internal-node access • 360 CUTs per chip

  3. Large-Scale SRAM Variability Characterization Chip in 45nm CMOS • Large-Scale SRAM Metrics – SRRV, WWTV, etc. • Silicon data measured for each SRAM cell • Characterized under natural operating environment • Correlate to cell bit fails in functional SRAM 2.2mm×2.2mm • Functional SRAM arrays • Direct bit-line access • 768Kb per chip

  4. Large-Scale SRAM Variability Characterization Chip in 45nm CMOS • The large-scale read/write margin measurements showed excellent correlation, near failure, to SRAM DC RSNM and IW measurements • µ/σ yield estimates has been shown to be highly dependent on the read stability or writeability metric used and is therefore unsuitable for estimating yield • Large-scale characterization of SRAM read stability and writeability is critical for SRAM failure modeling and can be used to complement BIST and nano-probing • Acknowledgement: NSF, C2S2, IBM Faculty Partnership Award, STMicroelectronics

More Related